Infineon Technologies AG Single FETs, MOSFETs IPD04N03LB G

Description
N-Channel 30V 50A (Tc) 115W (Tc) Surface Mount PG-TO252-3-11
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Description
N-Channel 30V 50A (Tc) 115W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet

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Single FETs, MOSFETs - IPD04N03LBGINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD04N03LBGINTR-ND
Single FETs, MOSFETs IPD04N03LBGINTR-ND
N-Channel 30V 50A (Tc) 115W (Tc) Surface Mount PG-TO252-3-11

N-Channel 30V 50A (Tc) 115W (Tc) Surface Mount PG-TO252-3-11

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD04N03LB G - 142623-IPD04N03LB G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD04N03LB G
142623-IPD04N03LB G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD04N03LB G 142623-IPD04N03LB G
Manufacturer: Infineon Technologies Win Source Part Number: 142623-IPD04N03LB G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 70μA Max Gate Charge: 40nC @ 5V Max Input Capacitance: 5200pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.1 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 142623-IPD04N03LB G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 70μA
Max Gate Charge: 40nC @ 5V
Max Input Capacitance: 5200pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD04N03LBGINTR-ND 142623-IPD04N03LB G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD04N03LB G
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); PG-TO252-3
V(BR)DSS 30 volts
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