Infineon Technologies AG Single FETs, MOSFETs IPD075N03LGBTMA1

Description
N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet
Description
N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPD075N03LGBTMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD075N03LGBTMA1-ND
Single FETs, MOSFETs IPD075N03LGBTMA1-ND
N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11

N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD075N03LGBTMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD075N03LGBTMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD075N03LGBTMA1
MOSFET N-CH 30V 50A TO252-31

MOSFET N-CH 30V 50A TO252-31

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number IPD075N03LGBTMA1-ND IPD075N03LGBTMA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SB859C-E - 855128-2SB859C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor - T2G6001528-Q3 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Power Gain 15.5 dB
View Details
4 suppliers