Infineon Technologies AG Automotive MOSFET IPD25N06S2-40

Description
Summary of Features N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Electric vehicle (EV) drivetrain system EV traction inverter On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAK-TC264D-40F200N BC | AURIX™ Family – TC26xD FS05MR12A6MA1B | Silicon Carbide CoolSiC™ MOSFET Modules BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET TLE7368-2E | OPTIREG™ PMIC TLE8110ED | FLEX IPW65R048CFDA | Automotive MOSFET IPW65R080CFDA | Automotive MOSFET IPW65R150CFDA | Automotive MOSFET TLE4267G | OPTIREG™ linear voltage regulators (LDO) BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC264D-40F200N BC | AURIX™ Family – TC26xD FS05MR12A6MA1B | Silicon Carbide CoolSiC™ MOSFET Modules BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET TLE7368-2E | OPTIREG™ PMIC TLE8110ED | FLEX IPW65R048CFDA | Automotive MOSFET 1 2 3
  • Automotive MOSFET - IPD25N06S2-40 - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IPD25N06S2-40 - 1186118-IPD25N06S2-40 - Win Source Electronics
    Win Source Electronics
  • Transistor - 102683485 - Radwell International
    Radwell International
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Description
Summary of Features N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Electric vehicle (EV) drivetrain system EV traction inverter On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAK-TC264D-40F200N BC | AURIX™ Family – TC26xD FS05MR12A6MA1B | Silicon Carbide CoolSiC™ MOSFET Modules BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET TLE7368-2E | OPTIREG™ PMIC TLE8110ED | FLEX IPW65R048CFDA | Automotive MOSFET IPW65R080CFDA | Automotive MOSFET IPW65R150CFDA | Automotive MOSFET TLE4267G | OPTIREG™ linear voltage regulators (LDO) BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC264D-40F200N BC | AURIX™ Family – TC26xD FS05MR12A6MA1B | Silicon Carbide CoolSiC™ MOSFET Modules BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET TLE7368-2E | OPTIREG™ PMIC TLE8110ED | FLEX IPW65R048CFDA | Automotive MOSFET 1 2 3
Request a Quote
Datasheet
Datasheet Summary
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The IPD25N06S2-40 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring a PG-TO252-3-11 package with a maximum continuous drain current of 29 A at 25°C and a drain-source breakdown voltage of 55 V. It has a maximum on-state resistance of 40 mΩ at 10 V gate-source voltage and is AEC-Q101 qualified for automotive use. The device supports an operating junction temperature up to 175°C, is MSL1 rated for reflow up to 260°C, and is RoHS-compliant. It is 100% avalanche tested with a single-pulse avalanche energy rating of 80 mJ at 25 A drain current.

Datasheet Summary
Powered by GS/AI

The IPD25N06S2-40 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring a PG-TO252-3-11 package with a maximum continuous drain current of 29 A at 25°C and a drain-source breakdown voltage of 55 V. It has a maximum on-state resistance of 40 mΩ at 10 V gate-source voltage and is AEC-Q101 qualified for automotive use. The device supports an operating junction temperature up to 175°C, is MSL1 rated for reflow up to 260°C, and is RoHS-compliant. It is 100% avalanche tested with a single-pulse avalanche energy rating of 80 mJ at 25 A drain current.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPD25N06S2-40 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPD25N06S2-40
Automotive MOSFET IPD25N06S2-40
Summary of Features N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Electric vehicle (EV) drivetrain system EV traction inverter On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAK-TC264D-40F200N BC | AURIX™ Family – TC26xD FS05MR12A6MA1B | Silicon Carbide CoolSiC™ MOSFET Modules BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET TLE7368-2E | OPTIREG™ PMIC TLE8110ED | FLEX IPW65R048CFDA | Automotive MOSFET IPW65R080CFDA | Automotive MOSFET IPW65R150CFDA | Automotive MOSFET TLE4267G | OPTIREG™ linear voltage regulators (LDO) BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC264D-40F200N BC | AURIX™ Family – TC26xD FS05MR12A6MA1B | Silicon Carbide CoolSiC™ MOSFET Modules BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET TLE7368-2E | OPTIREG™ PMIC TLE8110ED | FLEX IPW65R048CFDA | Automotive MOSFET 1 2 3

Summary of Features

  • N-channel - Enhancement mode
  • • Automotive AEC Q101 qualified
  • • MSL1 up to 260°C peak reflow
  • • 175°C operating temperature
  • • Green package (lead free)
  • • Ultra low Rds(on)
  • • 100% Avalanche tested

Benefits

  • world's lowest RDS at 55V (on) in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Potential Applications

  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors

Simulation/SPICE-Model


Applications

  • Electric vehicle (EV) drivetrain system
  • EV traction inverter
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • SAK-TC264D-40F200N BC |
    AURIX™ Family – TC26xD
  • FS05MR12A6MA1B |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • BTS3405G |
    Classic HITFET™ 12V | automotive smart low-side switches
  • TLE42764GV |
    OPTIREG™ linear voltage regulators (LDO)
  • SPD09P06PL G |
    P-Channel Power MOSFET
  • TLE7368-2E |
    OPTIREG™ PMIC
  • TLE8110ED |
    FLEX
  • IPW65R048CFDA |
    Automotive MOSFET
  • IPW65R080CFDA |
    Automotive MOSFET
  • IPW65R150CFDA |
    Automotive MOSFET
  • TLE4267G |
    OPTIREG™ linear voltage regulators (LDO)
  • BTS5200-4EKA |
    PROFET™ + 12V | automotive smart high-side switch
  • SAK-TC264D-40F200N BC |
    AURIX™ Family – TC26xD
  • FS05MR12A6MA1B |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • BTS3405G |
    Classic HITFET™ 12V | automotive smart low-side switches
  • TLE42764GV |
    OPTIREG™ linear voltage regulators (LDO)
  • SPD09P06PL G |
    P-Channel Power MOSFET
  • TLE7368-2E |
    OPTIREG™ PMIC
  • TLE8110ED |
    FLEX
  • IPW65R048CFDA |
    Automotive MOSFET

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Supplier's Site Datasheet
Electronic Surplus - IPD25N06S2-40 - 1186118-IPD25N06S2-40 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPD25N06S2-40
1186118-IPD25N06S2-40
Electronic Surplus - IPD25N06S2-40 1186118-IPD25N06S2-40
Manufacturer: Infineon Technologies Win Source Part Number: 1186118-IPD25N06S2-4 0 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186118-IPD25N06S2-40
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now
Transistor - 102683485 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
102683485
Transistor 102683485
MOSFET N-CH 55V 29A DPAK-2 OPTIMOS . FREE 2 YEAR RADWELL WARRANTY

MOSFET N-CH 55V 29A DPAK-2 OPTIMOS . FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IPD25N06S2-40 1186118-IPD25N06S2-40 102683485
Product Name Automotive MOSFET Electronic Surplus - IPD25N06S2-40 Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.1 to 4 volts
rDS(on) 0.0400 ohms
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