Infineon Technologies AG Discrete Semiconductor Products IPD090N03L G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 068985-IPD090N03L G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3 DPak (2 Leads + Tab) SC-63 Manufacturer Device Package: PG-TO252-3 Standard Package: 1 FET Type: MOSFET N-Channel Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 1600pF @ 15V Power - Max: 42W Rds On (Max) @ Id Vgs: 9 mOhm @ 30A 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
  • Discrete Semiconductor Products - 068985-IPD090N03L G - Win Source Electronics
    Win Source Electronics
  • Transistors - IPD090N03L G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N Channel, 30V, 40A, To-252; Channel Type Infineon - 60R2696 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 068985-IPD090N03L G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3 DPak (2 Leads + Tab) SC-63 Manufacturer Device Package: PG-TO252-3 Standard Package: 1 FET Type: MOSFET N-Channel Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 1600pF @ 15V Power - Max: 42W Rds On (Max) @ Id Vgs: 9 mOhm @ 30A 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - 068985-IPD090N03L G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
068985-IPD090N03L G
Discrete Semiconductor Products 068985-IPD090N03L G
Manufacturer: Infineon Technologies Win Source Part Number: 068985-IPD090N03L G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3 DPak (2 Leads + Tab) SC-63 Manufacturer Device Package: PG-TO252-3 Standard Package: 1 FET Type: MOSFET N-Channel Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 1600pF @ 15V Power - Max: 42W Rds On (Max) @ Id Vgs: 9 mOhm @ 30A 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 068985-IPD090N03L G
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS
Packaging: Reel
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3 DPak (2 Leads + Tab) SC-63
Manufacturer Device Package: PG-TO252-3
Standard Package: 1
FET Type: MOSFET N-Channel Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) @ Vds: 1600pF @ 15V
Power - Max: 42W
Rds On (Max) @ Id Vgs: 9 mOhm @ 30A 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

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ERSAELECTRONICS PTE. LTD.
Singapore
30V 40A TO252 MOSFET Transistor
278-IPD090N03L G
30V 40A TO252 MOSFET Transistor 278-IPD090N03L G
MOSFET N-CH 30V 40A TO252-3 Product overview: IPD090N03L G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD090N03L G can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 40A TO252-3 Product overview: IPD090N03L G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD090N03L G can be used for catalog matching and distributor lookup.

Supplier's Site
Transistors - IPD090N03L G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD090N03L G
Transistors IPD090N03L G
TO-252-3 MOSFETs ROHS

TO-252-3 MOSFETs ROHS

Supplier's Site
Mosfet, N Channel, 30V, 40A, To-252; Channel Type Infineon - 60R2696 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 40A, To-252; Channel Type Infineon
60R2696
Mosfet, N Channel, 30V, 40A, To-252; Channel Type Infineon 60R2696
MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPD090N03L G
MOSFET IPD090N03L G
MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3

MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 068985-IPD090N03L G 278-IPD090N03L G IPD090N03L G 60R2696 IPD090N03L G
Product Name Discrete Semiconductor Products 30V 40A TO252 MOSFET Transistor Transistors Mosfet, N Channel, 30V, 40A, To-252; Channel Type Infineon MOSFET
Polarity N-Channel N-Channel
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