MOSFET N-CH 80V 50A TO252-3 Product overview: IPD50N08S413ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50N08S413ATMA
N-Channel 80V 50A (Tc) 72W (Tc) Surface Mount PG-TO252-3-313
N-Channel 80V 50A (Tc) 72W (Tc) Surface Mount PG-TO252-3-313
N-Channel 80V 50A (Tc) 72W (Tc) Surface Mount PG-TO252-3-313
Win Source Part Number: 991662-IPD50N08S413A
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 33µA
Power Dissipation (Max): 72W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD50N08S413ATMA1-ND
Base Product Number: IPD50N08
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 80V, 175DEG C, 72W ROHS COMPLIANT: YES
MOSFET N-CH 80V 50A TO252-3
Trans MOSFET N-CH 80V 50A
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD50N08S413ATMA1 | 448-IPD50N08S413ATMA1DKR-ND | 2291831 | 991662-IPD50N08S413ATMA1 | 39AH8908 | IPD50N08S413ATMA1 | IPD50N08S413ATMA1 | 376-IPD50N08S413ATMA1 |
| Product Name | 80V 50A TO252 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 80V, 175Deg C, 72W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Trans MOSFET N-CH 80V 50A |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 80 volts | |||||||
| PD | 72 milliwatts | 72000 milliwatts | 72000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
