650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A
The 650 V CoolMOS™ CFD7A SJ MOSFET are specifically optimized to meet the requirements for the electric-vehicle applications. CFD7A combines highest quality going well beyond the AEC-Q101 standards with unrivalled technology expertise. The CoolMOS™ CFD7A family is manufactured on the highly automated 300 mm production line, which contributes to reach the zero-defect target in mass production while fulfilling the growing market demand.
Summary of Features
CoolMOS™ 7 series
low gate charge
low stored energy in COSS
low Qrr
automotive qualification
Fieldproven CoolMOS™ quality
CoolMOS™ since 1998
Benefits
higher switching frequencies
high efficiency @ soft switching
higher power density
MOSFET suits hard & resonant topologies
Kelvin source
Applications
AC-DC auxiliary power supplies
Automotive secondary power distribution unit
High-voltage DC-DC converter for electric vehicles
On-board charging (OBC) for electric vehicles
Designers who used this product also designed with
BSL215C | Dual MOSFET
AIMCQ120R080M1T | Silicon Carbide MOSFET Discretes
AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes
AIMCQ120R060M1T Silicon Carbide MOSFET Discretes
BSS159N | N-Channel Depletion Mode MOSFET
TLE9471-3ES V33 | OPTIREG™ Lite SBC
AIDK08S65C5 | CoolSiC™ Schottky Diodes
BSS84P | Small signal/small power MOSFET
BAS52-02V | Schottky Diodes
AIDK12S65C5 | CoolSiC™ Schottky Diodes
AIGBE40N65F5 | Automotive IGBT discretes
IAUT300N08S5N011 | Automotive MOSFET
SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP
IAUC41N06S5L100 | Automotive MOSFET
BSL215C | Dual MOSFET
AIMCQ120R080M1T | Silicon Carbide MOSFET Discretes
AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes
AIMCQ120R060M1T Silicon Carbide MOSFET Discretes
BSS159N | N-Channel Depletion Mode MOSFET
TLE9471-3ES V33 | OPTIREG™ Lite SBC
AIDK08S65C5 | CoolSiC™ Schottky Diodes
BSS84P | Small signal/small power MOSFET
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650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A
The 650 V CoolMOS™ CFD7A SJ MOSFET are specifically optimized to meet the requirements for the electric-vehicle applications. CFD7A combines highest quality going well beyond the AEC-Q101 standards with unrivalled technology expertise. The CoolMOS™ CFD7A family is manufactured on the highly automated 300 mm production line, which contributes to reach the zero-defect target in mass production while fulfilling the growing market demand.
Summary of Features
- CoolMOS™ 7 series
- low gate charge
- low stored energy in COSS
- low Qrr
- automotive qualification
- Fieldproven CoolMOS™ quality
- CoolMOS™ since 1998
Benefits
- higher switching frequencies
- high efficiency @ soft switching
- higher power density
- MOSFET suits hard & resonant topologies
- Kelvin source
Applications
- AC-DC auxiliary power supplies
- Automotive secondary power distribution unit
- High-voltage DC-DC converter for electric vehicles
- On-board charging (OBC) for electric vehicles
Designers who used this product also designed with
- BSL215C |
Dual MOSFET
- AIMCQ120R080M1T |
Silicon Carbide MOSFET Discretes
- AIMDQ75R040M1H |
Silicon Carbide MOSFET Discretes
- AIMCQ120R060M1T
Silicon Carbide MOSFET Discretes
- BSS159N |
N-Channel Depletion Mode MOSFET
- TLE9471-3ES V33 |
OPTIREG™ Lite SBC
- AIDK08S65C5 |
CoolSiC™ Schottky Diodes
- BSS84P |
Small signal/small power MOSFET
- BAS52-02V |
Schottky Diodes
- AIDK12S65C5 |
CoolSiC™ Schottky Diodes
- AIGBE40N65F5 |
Automotive IGBT discretes
- IAUT300N08S5N011 |
Automotive MOSFET
- SAK-TC365DP-64F300W AA |
AURIX™ Family – TC36xDP
- IAUC41N06S5L100 |
Automotive MOSFET
- BSL215C |
Dual MOSFET
- AIMCQ120R080M1T |
Silicon Carbide MOSFET Discretes
- AIMDQ75R040M1H |
Silicon Carbide MOSFET Discretes
- AIMCQ120R060M1T
Silicon Carbide MOSFET Discretes
- BSS159N |
N-Channel Depletion Mode MOSFET
- TLE9471-3ES V33 |
OPTIREG™ Lite SBC
- AIDK08S65C5 |
CoolSiC™ Schottky Diodes
- BSS84P |
Small signal/small power MOSFET
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