N-Channel 900V 15A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
N-Channel 900V 15A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
N-Channel 900V 15A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
Win Source Part Number: 1382308-IPB90R340C3A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 1,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPB90R340
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 900V 15A TO263-3 Product overview: IPB90R340C3ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB90R340C3ATMA2
(PRICE/TC) MOSFET, N-CH, 900V, 15A, 150DEG C, 208W; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:15A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):0.28OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3V; POWER ROHS COMPLIANT:. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 900V, 15A, 150DEG C, 208W; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 900V 15A TO263-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB90R340C3ATMA2DKR-ND | 1382308-IPB90R340C3ATMA2 | 278-IPB90R340C3ATMA2 | 2207397P | 135059271 | 02AH6890 | IPB90R340C3ATMA2 | IPB90R340C3ATMA2 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | 900V 15A MOSFET Transistor | MOSFETs | Transistor | Mosfet, N-Ch, 900V, 15A, 150Deg C, 208W; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | Tape & Reel (TR) | TO-263; TO-263 | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| PD | 208000 milliwatts | 208 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| MOSFET Operating Mode | Enhancement |
