N-channel MOSFET for switching applications in DPAK-2 package, rated for 60 V drain-source voltage, 100 A continuous drain current, and 100 A pulsed drain current. On-resistance is 3.4 mΩ at 10 V gate-source voltage and 4.2 mΩ at 4.5 V gate-source voltage. Gate charge is 45 nC, and total gate resistance is 1.5 Ω. Operating and storage temperature range is -55 °C to 175 °C. Complies with AEC-Q101 and RoHS standards.
MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD034N06N3 G |
| Product Name | MOSFET |
