Infineon Technologies AG Single FETs, MOSFETs IPD12CN10NG

IPD12CN10NG is an N-channel MOSFET in a PG-TO252-3 package designed for high-frequency switching and synchronous rectification. It has a drain-source voltage rating of 100 V, a continuous drain current of 67 A at 25 °C, and a maximum on-resistance of 12.4 mΩ at 10 V gate drive. The device supports anOperating temperature up to 175 °C, with a thermal resistance from junction to case of 1.2 K/W and junction-to-ambient of 50 K/W on a 6 cm² copper area. It is RoHS compliant and halogen-free per IEC61249-2-21, qualified to JEDEC standards, and meets AEC-Q200 for automotive applications.