N-Channel 60V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
N-Channel 60V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
N-Channel 60V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 60V 100A TO252-3-11 Product overview: IPD100N06S403ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD100N06S403ATM
Win Source Part Number: 1028127-IPD100N06S40
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD90N06S404ATMA2; IPD038N06N3GATMA1; IPD048N06L3GBTMA1; FDD86567-F085; STD65N55LF3; DMTH6010LK3Q-13; IPD90N06S4L03ATMA2; DMTH6010LK3-13; SQD97N06-6M3L_GE3IPD
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPD100N06S403ATM
Base Product Number: IPD100
Drive Voltage (Max Rds On, Min Rds On): 10V
Infineon MOSFET IPD100N06S403ATMA2
Infineon MOSFET IPD100N06S403ATMA2
Infineon MOSFET IPD100N06S403ATMA2
MOSFET, AEC-Q101, N-CH, 60V, 100A, 150W ROHS COMPLIANT: YES
MOSFET N-CH 60V 100A TO252-3-11
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-IPD100N06S403ATMA2DKR-ND | 278-IPD100N06S403ATMA2 | 1028127-IPD100N06S403ATMA2 | 2152502P | 2152502 | 39AH8903 | IPD100N06S403ATMA2 | IPD100N06S403ATMA2 |
| Product Name | Single FETs, MOSFETs | 60V 100A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Mosfet, Aec-Q101, N-Ch, 60V, 100A, 150W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | SOT3 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Transistor Grade / Operating Range | Automotive | |||||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 60 volts |