Infineon Technologies AG Single FETs, MOSFETs IPB80P03P4L07ATMA1

Description
P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
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Description
P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
Request a Quote Datasheet

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Single FETs, MOSFETs - 448-IPB80P03P4L07ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPB80P03P4L07ATMA1TR-ND
Single FETs, MOSFETs 448-IPB80P03P4L07ATMA1TR-ND
P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2

P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 - 1045835-IPB80P03P4L07ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1
1045835-IPB80P03P4L07ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 1045835-IPB80P03P4L07ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045835-IPB80P03P4L0 7ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 130μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: +5V, -16V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045835-IPB80P03P4L07ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2V @ 130μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 5700pF @ 25V
Maximum Gate-Source Voltage: +5V, -16V
Maximum Rds On at Id,Vgs: 6.9 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80P03P4L07ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB80P03P4L07ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB80P03P4L07ATMA1
MOSFET P-CH 30V 80A TO263-3

MOSFET P-CH 30V 80A TO263-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 448-IPB80P03P4L07ATMA1TR-ND 1045835-IPB80P03P4L07ATMA1 IPB80P03P4L07ATMA1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; PG-TO263-3-2 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
V(BR)DSS 30 volts
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