Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 IPB80P03P4L07ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045835-IPB80P03P4L0 7ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 130μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: +5V, -16V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 - 1045835-IPB80P03P4L07ATMA1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 448-IPB80P03P4L07ATMA1TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80P03P4L07ATMA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045835-IPB80P03P4L0 7ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 130μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: +5V, -16V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 - 1045835-IPB80P03P4L07ATMA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1
1045835-IPB80P03P4L07ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 1045835-IPB80P03P4L07ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045835-IPB80P03P4L0 7ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 130μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: +5V, -16V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045835-IPB80P03P4L07ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2V @ 130μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 5700pF @ 25V
Maximum Gate-Source Voltage: +5V, -16V
Maximum Rds On at Id,Vgs: 6.9 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPB80P03P4L07ATMA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPB80P03P4L07ATMA1TR-ND
Single FETs, MOSFETs 448-IPB80P03P4L07ATMA1TR-ND
P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2

P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80P03P4L07ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB80P03P4L07ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB80P03P4L07ATMA1
MOSFET P-CH 30V 80A TO263-3

MOSFET P-CH 30V 80A TO263-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1045835-IPB80P03P4L07ATMA1 448-IPB80P03P4L07ATMA1TR-ND IPB80P03P4L07ATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P03P4L07ATMA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 88000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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