The IPB80P04P4-05 is a P-channel enhancement mode MOSFET designed for automotive applications, featuring a drain-source voltage rating of -40 V and a continuous drain current of -80 A. It is packaged in a PG-TO263-3-2 surface-mount package and operates at a junction temperature up to 175°C. The device has a maximum on-state resistance of 5.2 mΩ at -10 V gate-source voltage and is 100% avalanche tested with a single-pulse avalanche energy of 64 mJ. It meets AEC-Q200 qualifications, is RoHS compliant, and has an MSL1 rating up to 260°C peak reflow. The thermal resistance from junction to case is 1.2 K/W.
Summary of Features
Simulation/SPICE-Mod
Applications
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MOSFETs P-Ch -40V -80A D2PAK-2 OptiMOS-P2 Product overview: IPB80P04P4-05 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -80A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB80P04P4-05 can be used for catalog matching and distributor lookup.
MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPB80P04P4-05 | 2088-IPB80P04P4-05 | IPB80P04P4-05 | IPB80P04P4-05 |
| Product Name | Automotive MOSFET | -40V -80A MOSFET Transistor | MOSFET | Transistors |
| Polarity | P-Channel; P | P-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| VGS(off) | -4 to -2 volts | |||
| rDS(on) | 0.0049 ohms | |||
| TJ | -55 to 175 C (-67 to 347 F) |