Infineon Technologies AG Automotive MOSFET IPD30N06S2-23

Description
Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE9471-3ES | OPTIREG™ Lite SBC IPW65R080CFDA | Automotive MOSFET BSS83P | Small signal/small power MOSFET BSS84P | Small signal/small power MOSFET AIGW40N65F5 | Automotive IGBT discretes AIKW40N65DF5 | Automotive IGBT discretes TLE4473G V53 | OPTIREG™ linear voltage regulators (LDO) TLE9471-3ES | OPTIREG™ Lite SBC IPW65R080CFDA | Automotive MOSFET BSS83P | Small signal/small power MOSFET BSS84P | Small signal/small power MOSFET AIGW40N65F5 | Automotive IGBT discretes AIKW40N65DF5 | Automotive IGBT discretes TLE4473G V53 | OPTIREG™ linear voltage regulators (LDO) TLE9471-3ES | OPTIREG™ Lite SBC 1 2
  • Automotive MOSFET - IPD30N06S2-23 - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IPD30N06S2-23 - 1186125-IPD30N06S2-23 - Win Source Electronics
    Win Source Electronics
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Description
Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE9471-3ES | OPTIREG™ Lite SBC IPW65R080CFDA | Automotive MOSFET BSS83P | Small signal/small power MOSFET BSS84P | Small signal/small power MOSFET AIGW40N65F5 | Automotive IGBT discretes AIKW40N65DF5 | Automotive IGBT discretes TLE4473G V53 | OPTIREG™ linear voltage regulators (LDO) TLE9471-3ES | OPTIREG™ Lite SBC IPW65R080CFDA | Automotive MOSFET BSS83P | Small signal/small power MOSFET BSS84P | Small signal/small power MOSFET AIGW40N65F5 | Automotive IGBT discretes AIKW40N65DF5 | Automotive IGBT discretes TLE4473G V53 | OPTIREG™ linear voltage regulators (LDO) TLE9471-3ES | OPTIREG™ Lite SBC 1 2
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Datasheet
Datasheet Summary
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IPD30N06S2-23 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring a 55 V drain-source breakdown voltage and a maximum continuous drain current of 30 A. It is packaged in a PG-TO252-3-11 case with a maximum on-state resistance of 23 mΩ at 10 V gate-source voltage and 21 A drain current. The device is AEC-Q101 qualified, operates at junction temperatures up to 175°C, and supports MSL1 reflow with a peak temperature of 260°C. It is 100% avalanche tested with a single-pulse avalanche energy rating of 150 mJ and has a green, lead-free package. Thermal resistance from junction to case is 1.5 K/W. The gate-source voltage rating is ±20 V, and the device is RoHS compliant.

Datasheet Summary
Powered by GS/AI

IPD30N06S2-23 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring a 55 V drain-source breakdown voltage and a maximum continuous drain current of 30 A. It is packaged in a PG-TO252-3-11 case with a maximum on-state resistance of 23 mΩ at 10 V gate-source voltage and 21 A drain current. The device is AEC-Q101 qualified, operates at junction temperatures up to 175°C, and supports MSL1 reflow with a peak temperature of 260°C. It is 100% avalanche tested with a single-pulse avalanche energy rating of 150 mJ and has a green, lead-free package. Thermal resistance from junction to case is 1.5 K/W. The gate-source voltage rating is ±20 V, and the device is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPD30N06S2-23 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPD30N06S2-23
Automotive MOSFET IPD30N06S2-23
Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE9471-3ES | OPTIREG™ Lite SBC IPW65R080CFDA | Automotive MOSFET BSS83P | Small signal/small power MOSFET BSS84P | Small signal/small power MOSFET AIGW40N65F5 | Automotive IGBT discretes AIKW40N65DF5 | Automotive IGBT discretes TLE4473G V53 | OPTIREG™ linear voltage regulators (LDO) TLE9471-3ES | OPTIREG™ Lite SBC IPW65R080CFDA | Automotive MOSFET BSS83P | Small signal/small power MOSFET BSS84P | Small signal/small power MOSFET AIGW40N65F5 | Automotive IGBT discretes AIKW40N65DF5 | Automotive IGBT discretes TLE4473G V53 | OPTIREG™ linear voltage regulators (LDO) TLE9471-3ES | OPTIREG™ Lite SBC 1 2

Summary of Features

  • • N-channel - Enhancement mode
  • • Automotive AEC Q101 qualified
  • • MSL1 up to 260°C peak reflow
  • • 175°C operating temperature
  • • Green package (lead free)
  • • Ultra low Rds(on)
  • • 100% Avalanche tested

Benefits

  • world's lowest RDS at 55V (on) in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Potential Applications

  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors

Simulation/SPICE-Model


Applications

  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • TLE9471-3ES |
    OPTIREG™ Lite SBC
  • IPW65R080CFDA |
    Automotive MOSFET
  • BSS83P |
    Small signal/small power MOSFET
  • BSS84P |
    Small signal/small power MOSFET
  • AIGW40N65F5 |
    Automotive IGBT discretes
  • AIKW40N65DF5 |
    Automotive IGBT discretes
  • TLE4473G V53 |
    OPTIREG™ linear voltage regulators (LDO)
  • TLE9471-3ES |
    OPTIREG™ Lite SBC
  • IPW65R080CFDA |
    Automotive MOSFET
  • BSS83P |
    Small signal/small power MOSFET
  • BSS84P |
    Small signal/small power MOSFET
  • AIGW40N65F5 |
    Automotive IGBT discretes
  • AIKW40N65DF5 |
    Automotive IGBT discretes
  • TLE4473G V53 |
    OPTIREG™ linear voltage regulators (LDO)
  • TLE9471-3ES |
    OPTIREG™ Lite SBC

1
2

Supplier's Site Datasheet
Electronic Surplus - IPD30N06S2-23 - 1186125-IPD30N06S2-23 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPD30N06S2-23
1186125-IPD30N06S2-23
Electronic Surplus - IPD30N06S2-23 1186125-IPD30N06S2-23
Manufacturer: Infineon Technologies Win Source Part Number: 1186125-IPD30N06S2-2 3 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186125-IPD30N06S2-23
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPD30N06S2-23 1186125-IPD30N06S2-23
Product Name Automotive MOSFET Electronic Surplus - IPD30N06S2-23
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.1 to 4 volts
rDS(on) 0.0230 ohms
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