MOSFET N-CH 55V 17A TO252-31 Product overview: IPD14N06S280ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 17A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 17A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD14N06S280ATMA
N-Channel 55V 17A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 17A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 17A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
Manufacturer: Infineon Technologies
Win Source Part Number: 110227-IPD14N06S280A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 47W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3-11
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 14μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 293pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Infineon MOSFET IPD14N06S280ATMA2
IPD14N06 - 55V-60V N-Channel Automotive MOSFET
MOSFET N-CH 55V 17A TO252-31
MOSFET, N-CH, 55V, 175DEG C, 47W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD14N06S280ATMA2 | 448-IPD14N06S280ATMA2CT-ND | 110227-IPD14N06S280ATMA2 | 2149031P | IPD14N06S280ATMA2 | IPD14N06S280ATMA2 | 39AH8904 |
| Product Name | 55V 17A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD14N06S280ATMA2 | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 55V, 175Deg C, 47W Rohs Compliant Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 55 volts | 55 volts | |||||
| PD | 47 milliwatts | 47000 milliwatts |
