MOSFET N-CH 55V 19A TO252-31 Product overview: IPD15N06S2L64ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD15N06S2L64ATM
Infineon MOSFET IPD15N06S2L64ATMA2
Infineon MOSFET IPD15N06S2L64ATMA2
Infineon MOSFET IPD15N06S2L64ATMA2
Win Source Part Number: 1004084-IPD15N06S2L6
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Power Dissipation (Max): 47W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPD15N06S2L64A
Base Product Number: IPD15N06
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 55V 19A TO252-31
N-Channel 55V 19A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 19A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 19A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 55V 19A TO252-31
MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD15N06S2L64ATMA2 | 2149033 | 1004084-IPD15N06S2L64ATMA2 | IPD15N06S2L64ATMA2 | IPD15N06S2L64ATMA2DKR-ND | IPD15N06S2L64ATMA2 | IPD15N06S2L64ATMA2 | 12AC9707 |
| Product Name | 55V 19A TO252 MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 55V, To-252; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 55 volts | 55 volts | ||||||
| PD | 47 milliwatts | 47000 milliwatts | 47000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
