Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD09N03LA IPD09N03LA

Description
Manufacturer: Infineon Technologies Win Source Part Number: 093592-IPD09N03LA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1642pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.6 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 093592-IPD09N03LA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1642pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.6 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD09N03LA - 093592-IPD09N03LA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD09N03LA
093592-IPD09N03LA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD09N03LA 093592-IPD09N03LA
Manufacturer: Infineon Technologies Win Source Part Number: 093592-IPD09N03LA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1642pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.6 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 093592-IPD09N03LA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 1642pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.6 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 093592-IPD09N03LA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD09N03LA
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 63000 milliwatts
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