Manufacturer: Infineon Technologies
Win Source Part Number: 1324727-IPB80N08S2L0
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 69
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB80N08S2L07ATMA1CT
Base Product Number: IPB80N
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 75V 80A TO263-3 Product overview: IPB80N08S2L07ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N08S2L07ATM
MOSFET N-CH 75V 80A TO263-3
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
MOSFET N-CH 75V 80A TO263-3
| Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1324727-IPB80N08S2L07ATMA1 | 2496906P | IPB80N08S2L07ATMA1TR-ND | 278-IPB80N08S2L07ATMA1 | IPB80N08S2L07ATMA1 | IPB80N08S2L07ATMA1 | IPB80N08S2L07ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Single FETs, MOSFETs | 75V 80A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 300000 milliwatts | 300 milliwatts | 300000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; SOT3; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 4.5V, 10V | |
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
