Infineon Technologies AG Automotive MOSFET IPC50N04S5L-5R5

Description
Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Applications Automotive head unit Belt starter generator 48 V – inverter ISG Electric power steering (EPS) Designers who used this product also designed with BSS670S2L | Small signal/small power MOSFET BTS7008-1EPP | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch TLE5009A16D E1210 | Angle sensors BSS83P | Small signal/small power MOSFET TLE9261-3BQX | OPTIREG™ Mid-Range+ SBC TLE5012BD E1200 | Angle sensors TLS203B0EJ V50 | OPTIREG™ linear voltage regulators (LDO) BSP171P | Small signal/small power MOSFET SAK-TC333LP-32F200F AA AURIX™ Family – TC33xLP SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) BSS670S2L | Small signal/small power MOSFET BTS7008-1EPP | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch TLE5009A16D E1210 | Angle sensors BSS83P | Small signal/small power MOSFET TLE9261-3BQX | OPTIREG™ Mid-Range+ SBC TLE5012BD E1200 | Angle sensors 1 2 3
  • Automotive MOSFET - IPC50N04S5L-5R5 - Infineon Technologies AG
    Infineon Technologies AG
  • OEM Souring - 1463569-IPC50N04S5L-5R5 - Win Source Electronics
    Win Source Electronics
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Description
Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Applications Automotive head unit Belt starter generator 48 V – inverter ISG Electric power steering (EPS) Designers who used this product also designed with BSS670S2L | Small signal/small power MOSFET BTS7008-1EPP | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch TLE5009A16D E1210 | Angle sensors BSS83P | Small signal/small power MOSFET TLE9261-3BQX | OPTIREG™ Mid-Range+ SBC TLE5012BD E1200 | Angle sensors TLS203B0EJ V50 | OPTIREG™ linear voltage regulators (LDO) BSP171P | Small signal/small power MOSFET SAK-TC333LP-32F200F AA AURIX™ Family – TC33xLP SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) BSS670S2L | Small signal/small power MOSFET BTS7008-1EPP | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch TLE5009A16D E1210 | Angle sensors BSS83P | Small signal/small power MOSFET TLE9261-3BQX | OPTIREG™ Mid-Range+ SBC TLE5012BD E1200 | Angle sensors 1 2 3
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Datasheet
Datasheet Summary
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IPC50N04S5L-5R5 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring a 40 V drain-source breakdown voltage, 50 A continuous drain current, and a maximum on-state resistance of 5.5 mΩ at 10 V gate-source voltage. It is packaged in a PG-TDSON-8-33 case with a thermal resistance from junction to case of 3.6 K/W and an operating temperature range of -55 °C to +175 °C. The device is AEC-Q101 qualified, RoHS compliant, MSL1 rated for peak reflow temperature up to 260 °C, and 100% avalanche tested with a single-pulse avalanche energy of 30 mJ.

Datasheet Summary
Powered by GS/AI

IPC50N04S5L-5R5 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring a 40 V drain-source breakdown voltage, 50 A continuous drain current, and a maximum on-state resistance of 5.5 mΩ at 10 V gate-source voltage. It is packaged in a PG-TDSON-8-33 case with a thermal resistance from junction to case of 3.6 K/W and an operating temperature range of -55 °C to +175 °C. The device is AEC-Q101 qualified, RoHS compliant, MSL1 rated for peak reflow temperature up to 260 °C, and 100% avalanche tested with a single-pulse avalanche energy of 30 mJ.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPC50N04S5L-5R5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPC50N04S5L-5R5
Automotive MOSFET IPC50N04S5L-5R5
Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Applications Automotive head unit Belt starter generator 48 V – inverter ISG Electric power steering (EPS) Designers who used this product also designed with BSS670S2L | Small signal/small power MOSFET BTS7008-1EPP | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch TLE5009A16D E1210 | Angle sensors BSS83P | Small signal/small power MOSFET TLE9261-3BQX | OPTIREG™ Mid-Range+ SBC TLE5012BD E1200 | Angle sensors TLS203B0EJ V50 | OPTIREG™ linear voltage regulators (LDO) BSP171P | Small signal/small power MOSFET SAK-TC333LP-32F200F AA AURIX™ Family – TC33xLP SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) BSS670S2L | Small signal/small power MOSFET BTS7008-1EPP | PROFET™ +2 12V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch TLE5009A16D E1210 | Angle sensors BSS83P | Small signal/small power MOSFET TLE9261-3BQX | OPTIREG™ Mid-Range+ SBC TLE5012BD E1200 | Angle sensors 1 2 3

Summary of Features

  • OptiMOS™ - power MOSFET for automotive applications
  • N-channel - Enhancement mode - Logic Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested

Applications

  • Automotive head unit
  • Belt starter generator 48 V – inverter ISG
  • Electric power steering (EPS)

Designers who used this product also designed with


  • BSS670S2L |
    Small signal/small power MOSFET
  • BTS7008-1EPP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS7040-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS3046SDL |
    Classic HITFET™ 24V |automotive smart low-side switch
  • TLE5009A16D E1210 |
    Angle sensors
  • BSS83P |
    Small signal/small power MOSFET
  • TLE9261-3BQX |
    OPTIREG™ Mid-Range+ SBC
  • TLE5012BD E1200 |
    Angle sensors
  • TLS203B0EJ V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • BSP171P |
    Small signal/small power MOSFET
  • SAK-TC333LP-32F200F AA
    AURIX™ Family – TC33xLP
  • SAK-TC397XA-256F300S BD |
    AURIX™ Family – TC39xXA (ADAS)
  • BSS670S2L |
    Small signal/small power MOSFET
  • BTS7008-1EPP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS7040-1EPA |
    PROFET™ +2 12V | automotive smart high-side switch
  • BTS3046SDL |
    Classic HITFET™ 24V |automotive smart low-side switch
  • TLE5009A16D E1210 |
    Angle sensors
  • BSS83P |
    Small signal/small power MOSFET
  • TLE9261-3BQX |
    OPTIREG™ Mid-Range+ SBC
  • TLE5012BD E1200 |
    Angle sensors

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Supplier's Site Datasheet
OEM Souring - 1463569-IPC50N04S5L-5R5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
OEM Souring
1463569-IPC50N04S5L-5R5
OEM Souring 1463569-IPC50N04S5L-5R5
Category: OEM Souring Win Source Part Number: 1463569-IPC50N04S5L- 5R5 Manufacturer: Infineon Technologies

Category: OEM Souring
Win Source Part Number: 1463569-IPC50N04S5L-5R5
Manufacturer: Infineon Technologies

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPC50N04S5L-5R5 1463569-IPC50N04S5L-5R5
Product Name Automotive MOSFET OEM Souring
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 1.2 to 2 volts
rDS(on) 0.0055 ohms
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