Manufacturer: Infineon Technologies
Win Source Part Number: 1045839-IPD025N06NAT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 95μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 5200pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 90A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 90A TO252-3
N-Channel 60V 90A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TO252-3
N-Channel 60V 90A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TO252-3
N-Channel 60V 90A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 60V 90A TO252-3 Product overview: IPD025N06NATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD025N06NATMA1 can be used for catalog matching and distributor lookup.
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252
MOSFET N-CH 60V 90A TO252-3
MOSFET, N-CH, 60V, 90A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1045839-IPD025N06NATMA1 | IPD025N06NATMA1 | IPD025N06NATMA1TR-ND | 278-IPD025N06NATMA1 | IPD025N06NATMA1 | 376-IPD025N06NATMA1 | IPD025N06NATMA1 | 50Y2018 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD025N06NATMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 90A TO252 MOSFET Transistor | MOSFET | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 90A, To-252; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| PD | 3000 to 167000 milliwatts | 3000 milliwatts | 167 milliwatts | 3000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3; TO-252 (DPAK); PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
