Infineon Technologies AG 200V 34A TO252 MOSFET Transistor IPD320N20N3GBTMA1

MOSFET N-CH 200V 34A TO252-3 Product overview: IPD320N20N3GBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 34A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 34A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD320N20N3GBTMA1 can be used for catalog matching and distributor lookup.

N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount PG-TO252-3

Win Source Part Number: 1316376-IPD320N20N3GBTMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPD320N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V