Manufacturer: Infineon Technologies
Win Source Part Number: 1032165-IPD30N03S4L1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 10μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 980pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 13.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3-11
N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3-11
N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 30V 30A TO252-3 Product overview: IPD30N03S4L14ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N03S4L14ATM
MOSFET Transistor, N Channel, 30 A, 30 V, 0.0112 ohm, 10 V, 1.5 V RoHS Compliant: Yes
MOSFET N-CH 30V 30A TO252-3
MOSFET N-CH 30V 30A TO252-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1032165-IPD30N03S4L14ATMA1 | IPD30N03S4L14ATMA1TR-ND | 278-IPD30N03S4L14ATMA1 | 50Y2031 | IPD30N03S4L14ATMA1 | IPD30N03S4L14ATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD30N03S4L14ATMA1 | Single FETs, MOSFETs | 30V 30A TO252 MOSFET Transistor | Mosfet Transistor, N Channel, 30 A, 30 V, 0.0112 Ohm, 10 V, 1.5 V Rohs Compliant Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 31000 milliwatts | 31000 milliwatts | 31000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3; TO-252 (DPAK); PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount |
