Infineon Technologies AG Automotive MOSFET IPBE65R050CFD7A

Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Kelvin-source concept for further efficiency improvement Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications Active suspension control Electric vehicle (EV) drivetrain system High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC50N08S5N102 | Automotive MOSFET AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IAUT300N08S5N011 | Automotive MOSFET TLE75004-EPD | Multichannel SPI switches and controllers AIMBG120R120M1 | Silicon Carbide MOSFET Discretes BSP297 | Small signal/small power MOSFET BSS123N | Small signal/small power MOSFET IPD90P04P4L-04 | Automotive MOSFET SAL-TC387QP-160F300S AE AURIX™ Family – TC38xQP IAUT300N10S5N015 | Automotive MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes BSS308PE | Small signal/small power MOSFET IAUC41N06S5L100 | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC50N08S5N102 | Automotive MOSFET AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IAUT300N08S5N011 | Automotive MOSFET TLE75004-EPD | Multichannel SPI switches and controllers AIMBG120R120M1 | Silicon Carbide MOSFET Discretes BSP297 | Small signal/small power MOSFET 1 2 3 4
Request a Quote Datasheet
Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Kelvin-source concept for further efficiency improvement Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications Active suspension control Electric vehicle (EV) drivetrain system High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC50N08S5N102 | Automotive MOSFET AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IAUT300N08S5N011 | Automotive MOSFET TLE75004-EPD | Multichannel SPI switches and controllers AIMBG120R120M1 | Silicon Carbide MOSFET Discretes BSP297 | Small signal/small power MOSFET BSS123N | Small signal/small power MOSFET IPD90P04P4L-04 | Automotive MOSFET SAL-TC387QP-160F300S AE AURIX™ Family – TC38xQP IAUT300N10S5N015 | Automotive MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes BSS308PE | Small signal/small power MOSFET IAUC41N06S5L100 | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC50N08S5N102 | Automotive MOSFET AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IAUT300N08S5N011 | Automotive MOSFET TLE75004-EPD | Multichannel SPI switches and controllers AIMBG120R120M1 | Silicon Carbide MOSFET Discretes BSP297 | Small signal/small power MOSFET 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPBE65R050CFD7A - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPBE65R050CFD7A
Automotive MOSFET IPBE65R050CFD7A
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Kelvin-source concept for further efficiency improvement Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies Applications Active suspension control Electric vehicle (EV) drivetrain system High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles Designers who used this product also designed with SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC50N08S5N102 | Automotive MOSFET AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IAUT300N08S5N011 | Automotive MOSFET TLE75004-EPD | Multichannel SPI switches and controllers AIMBG120R120M1 | Silicon Carbide MOSFET Discretes BSP297 | Small signal/small power MOSFET BSS123N | Small signal/small power MOSFET IPD90P04P4L-04 | Automotive MOSFET SAL-TC387QP-160F300S AE AURIX™ Family – TC38xQP IAUT300N10S5N015 | Automotive MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes BSS308PE | Small signal/small power MOSFET IAUC41N06S5L100 | Automotive MOSFET SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC50N08S5N102 | Automotive MOSFET AIMBG120R010M1 | Silicon Carbide MOSFET Discretes IAUT300N08S5N011 | Automotive MOSFET TLE75004-EPD | Multichannel SPI switches and controllers AIMBG120R120M1 | Silicon Carbide MOSFET Discretes BSP297 | Small signal/small power MOSFET 1 2 3 4

650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A

The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.

When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.


Summary of Features

  • AEC-Q101 qualified
  • Battery voltages up to 475V without compromising on reliability standards
  • Efficiency improvements in hard- and soft-switching topologies up to 98.4%
  • Kelvin-source concept for further efficiency improvement
  • Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA

Benefits

  • Highest reliability in the field meeting automotive lifetime requirements
  • Enabling of higher power density designs
  • Scalable as designed for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
    • Hard-switching topologies (with SiC diode)
    • PFC boost-stages
    • DC-DC stage of on-board chargers
  • HV-LV DC-DC converters
    • LLC or full-bridge phase shift (ZVS)
  • Auxiliary power supplies

Applications

  • Active suspension control
  • Electric vehicle (EV) drivetrain system
  • High-voltage DC-DC converter for electric vehicles
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • SAK-TC365DP-64F300W AA |
    AURIX™ Family – TC36xDP
  • TLE9261-3BQX V33 |
    OPTIREG™ Mid-Range+ SBC
  • IAUC50N08S5N102 |
    Automotive MOSFET
  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • IAUT300N08S5N011 |
    Automotive MOSFET
  • TLE75004-EPD |
    Multichannel SPI switches and controllers
  • AIMBG120R120M1 |
    Silicon Carbide MOSFET Discretes
  • BSP297 |
    Small signal/small power MOSFET
  • BSS123N |
    Small signal/small power MOSFET
  • IPD90P04P4L-04 |
    Automotive MOSFET
  • SAL-TC387QP-160F300S AE
    AURIX™ Family – TC38xQP
  • IAUT300N10S5N015 |
    Automotive MOSFET
  • BSL215C |
    Dual MOSFET
  • AIMBG120R080M1 |
    Silicon Carbide MOSFET Discretes
  • BSS308PE |
    Small signal/small power MOSFET
  • IAUC41N06S5L100 |
    Automotive MOSFET
  • SAK-TC365DP-64F300W AA |
    AURIX™ Family – TC36xDP
  • TLE9261-3BQX V33 |
    OPTIREG™ Mid-Range+ SBC
  • IAUC50N08S5N102 |
    Automotive MOSFET
  • AIMBG120R010M1 |
    Silicon Carbide MOSFET Discretes
  • IAUT300N08S5N011 |
    Automotive MOSFET
  • TLE75004-EPD |
    Multichannel SPI switches and controllers
  • AIMBG120R120M1 |
    Silicon Carbide MOSFET Discretes
  • BSP297 |
    Small signal/small power MOSFET

1
2
3
4

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPBE65R050CFD7A
Product Name Automotive MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0500 ohms
Unlock Full Specs
to access all available technical data