650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A
The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.
When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.
Summary of Features
AEC-Q101 qualified
Battery voltages up to 475V without compromising on reliability standards
Efficiency improvements in hard- and soft-switching topologies up to 98.4%
Kelvin-source concept for further efficiency improvement
Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA
Benefits
Highest reliability in the field meeting automotive lifetime requirements
Enabling of higher power density designs
Scalable as designed for use in PFC and DC-DC stage
Granular portfolio available
Potential Applications
On-board chargers
Hard-switching topologies (with SiC diode)
PFC boost-stages
DC-DC stage of on-board chargers
HV-LV DC-DC converters
LLC or full-bridge phase shift (ZVS)
Auxiliary power supplies
Applications
Active suspension control
Electric vehicle (EV) drivetrain system
High-voltage DC-DC converter for electric vehicles
On-board charging (OBC) for electric vehicles
Designers who used this product also designed with
SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP
TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC
IAUC50N08S5N102 | Automotive MOSFET
AIMBG120R010M1 | Silicon Carbide MOSFET Discretes
IAUT300N08S5N011 | Automotive MOSFET
TLE75004-EPD | Multichannel SPI switches and controllers
AIMBG120R120M1 | Silicon Carbide MOSFET Discretes
BSP297 | Small signal/small power MOSFET
BSS123N | Small signal/small power MOSFET
IPD90P04P4L-04 | Automotive MOSFET
SAL-TC387QP-160F300S AE AURIX™ Family – TC38xQP
IAUT300N10S5N015 | Automotive MOSFET
BSL215C | Dual MOSFET
AIMBG120R080M1 | Silicon Carbide MOSFET Discretes
BSS308PE | Small signal/small power MOSFET
IAUC41N06S5L100 | Automotive MOSFET
SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP
TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC
IAUC50N08S5N102 | Automotive MOSFET
AIMBG120R010M1 | Silicon Carbide MOSFET Discretes
IAUT300N08S5N011 | Automotive MOSFET
TLE75004-EPD | Multichannel SPI switches and controllers
AIMBG120R120M1 | Silicon Carbide MOSFET Discretes
BSP297 | Small signal/small power MOSFET
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650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A
The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.
When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.
Summary of Features
- AEC-Q101 qualified
- Battery voltages up to 475V without compromising on reliability standards
- Efficiency improvements in hard- and soft-switching topologies up to 98.4%
- Kelvin-source concept for further efficiency improvement
- Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA
Benefits
- Highest reliability in the field meeting automotive lifetime requirements
- Enabling of higher power density designs
- Scalable as designed for use in PFC and DC-DC stage
- Granular portfolio available
Potential Applications
- On-board chargers
- Hard-switching topologies (with SiC diode)
- PFC boost-stages
- DC-DC stage of on-board chargers
- HV-LV DC-DC converters
- LLC or full-bridge phase shift (ZVS)
- Auxiliary power supplies
Applications
- Active suspension control
- Electric vehicle (EV) drivetrain system
- High-voltage DC-DC converter for electric vehicles
- On-board charging (OBC) for electric vehicles
Designers who used this product also designed with
- SAK-TC365DP-64F300W AA |
AURIX™ Family – TC36xDP
- TLE9261-3BQX V33 |
OPTIREG™ Mid-Range+ SBC
- IAUC50N08S5N102 |
Automotive MOSFET
- AIMBG120R010M1 |
Silicon Carbide MOSFET Discretes
- IAUT300N08S5N011 |
Automotive MOSFET
- TLE75004-EPD |
Multichannel SPI switches and controllers
- AIMBG120R120M1 |
Silicon Carbide MOSFET Discretes
- BSP297 |
Small signal/small power MOSFET
- BSS123N |
Small signal/small power MOSFET
- IPD90P04P4L-04 |
Automotive MOSFET
- SAL-TC387QP-160F300S AE
AURIX™ Family – TC38xQP
- IAUT300N10S5N015 |
Automotive MOSFET
- BSL215C |
Dual MOSFET
- AIMBG120R080M1 |
Silicon Carbide MOSFET Discretes
- BSS308PE |
Small signal/small power MOSFET
- IAUC41N06S5L100 |
Automotive MOSFET
- SAK-TC365DP-64F300W AA |
AURIX™ Family – TC36xDP
- TLE9261-3BQX V33 |
OPTIREG™ Mid-Range+ SBC
- IAUC50N08S5N102 |
Automotive MOSFET
- AIMBG120R010M1 |
Silicon Carbide MOSFET Discretes
- IAUT300N08S5N011 |
Automotive MOSFET
- TLE75004-EPD |
Multichannel SPI switches and controllers
- AIMBG120R120M1 |
Silicon Carbide MOSFET Discretes
- BSP297 |
Small signal/small power MOSFET
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