N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3
N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3
N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 500V 1.7A TO252-3 Product overview: IPD50R3K0CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R3K0CEAUMA1
Win Source Part Number: 996627-IPD50R3K0CEAU
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ CE
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 26W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPD50R3K0CEAUMA
Base Product Number: IPD50R3
Drive Voltage (Max Rds On, Min Rds On): 13V
MOSFET N-CH 500V 1.7A TO252-3
MOSFET, N-CH, 500V, 2.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2605136 | IPD50R3K0CEAUMA1TR-ND | 278-IPD50R3K0CEAUMA1 | 996627-IPD50R3K0CEAUMA1 | IPD50R3K0CEAUMA1 | IPD50R3K0CEAUMA1 | 43AC3270 |
| Product Name | MOSFETs | Single FETs, MOSFETs | 500V 1.7A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 500V, 2.6A, To-252-3; Transistor Polarity Infineon |
| Package Type | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | SOT3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 500 volts | ||||||
| PD | 26 milliwatts | 26000 milliwatts |
