Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPD50R3K0CEAUMA1

Description
Win Source Part Number: 996627-IPD50R3K0CEAU MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Power Dissipation (Max): 26W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPD50R3K0CEAUMA 1,IPD50R3K0CEAUMA1CT ,INFINFIPD50R3K0CEAU MA1,SP001396826,IPD5 0R3K0CEAUMA1TR,IPD50 R3K0CEAUMA1DKR Base Product Number: IPD50R3 Drive Voltage (Max Rds On, Min Rds On): 13V
Request a Quote Datasheet
Description
Win Source Part Number: 996627-IPD50R3K0CEAU MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Power Dissipation (Max): 26W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPD50R3K0CEAUMA 1,IPD50R3K0CEAUMA1CT ,INFINFIPD50R3K0CEAU MA1,SP001396826,IPD5 0R3K0CEAUMA1TR,IPD50 R3K0CEAUMA1DKR Base Product Number: IPD50R3 Drive Voltage (Max Rds On, Min Rds On): 13V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 996627-IPD50R3K0CEAUMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
996627-IPD50R3K0CEAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 996627-IPD50R3K0CEAUMA1
Win Source Part Number: 996627-IPD50R3K0CEAU MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Power Dissipation (Max): 26W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPD50R3K0CEAUMA 1,IPD50R3K0CEAUMA1CT ,INFINFIPD50R3K0CEAU MA1,SP001396826,IPD5 0R3K0CEAUMA1TR,IPD50 R3K0CEAUMA1DKR Base Product Number: IPD50R3 Drive Voltage (Max Rds On, Min Rds On): 13V

Win Source Part Number: 996627-IPD50R3K0CEAUMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ CE
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 26W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPD50R3K0CEAUMA1,IPD50R3K0CEAUMA1CT,INFINFIPD50R3K0CEAUMA1,SP001396826,IPD50R3K0CEAUMA1TR,IPD50R3K0CEAUMA1DKR
Base Product Number: IPD50R3
Drive Voltage (Max Rds On, Min Rds On): 13V

Buy Now Datasheet
MOSFETs - 2605136 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605136
MOSFETs 2605136
Infineon MOSFET IPD50R3K0CE

Infineon MOSFET IPD50R3K0CE

Supplier's Site
MOSFETs - 2605135 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605135
MOSFETs 2605135
Infineon MOSFET IPD50R3K0CE

Infineon MOSFET IPD50R3K0CE

Supplier's Site
MOSFETs - 2605136P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605136P
MOSFETs 2605136P
Infineon MOSFET IPD50R3K0CE

Infineon MOSFET IPD50R3K0CE

Supplier's Site
Single FETs, MOSFETs - IPD50R3K0CEAUMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD50R3K0CEAUMA1TR-ND
Single FETs, MOSFETs IPD50R3K0CEAUMA1TR-ND
N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD50R3K0CEAUMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD50R3K0CEAUMA1CT-ND
Single FETs, MOSFETs IPD50R3K0CEAUMA1CT-ND
N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD50R3K0CEAUMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD50R3K0CEAUMA1DKR-ND
Single FETs, MOSFETs IPD50R3K0CEAUMA1DKR-ND
N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Singapore
500V 1.7A TO252 MOSFET Transistor
278-IPD50R3K0CEAUMA1
500V 1.7A TO252 MOSFET Transistor 278-IPD50R3K0CEAUMA1
MOSFET N-CH 500V 1.7A TO252-3 Product overview: IPD50R3K0CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R3K0CEAUMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 1.7A TO252-3 Product overview: IPD50R3K0CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R3K0CEAUMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET CONSUMER

MOSFET CONSUMER

Buy Now Datasheet
Mosfet, N-Ch, 500V, 2.6A, To-252-3; Transistor Polarity Infineon - 43AC3270 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 2.6A, To-252-3; Transistor Polarity Infineon
43AC3270
Mosfet, N-Ch, 500V, 2.6A, To-252-3; Transistor Polarity Infineon 43AC3270
MOSFET, N-CH, 500V, 2.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 500V, 2.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD50R3K0CEAUMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD50R3K0CEAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD50R3K0CEAUMA1
MOSFET N-CH 500V 1.7A TO252-3

MOSFET N-CH 500V 1.7A TO252-3

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 996627-IPD50R3K0CEAUMA1 2605136 IPD50R3K0CEAUMA1TR-ND 278-IPD50R3K0CEAUMA1 IPD50R3K0CEAUMA1 43AC3270 IPD50R3K0CEAUMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs Single FETs, MOSFETs 500V 1.7A TO252 MOSFET Transistor MOSFET Mosfet, N-Ch, 500V, 2.6A, To-252-3; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 26000 milliwatts 26 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET Operating Mode Enhancement
Unlock Full Specs
to access all available technical data