P-Channel 100V 3.4A (Ta), 22A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TO252-3
P-Channel 100V 3.4A (Ta), 22A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TO252-3
P-Channel 100V 3.4A (Ta), 22A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TO252-3
TRENCH >=100V PG-TO252-3 Product overview: IPD11DP10NMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD11DP10NMATMA1
Win Source Part Number: 980925-IPD11DP10NMAT
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPD11DP10NMATMA1
Base Product Number: IPD11D
Drive Voltage (Max Rds On, Min Rds On): 10V
TRENCH >=100V PG-TO252-3
MOSFET, P-CH, 100V, TO-252-3 ROHS COMPLIANT: YES
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2354853P | 448-IPD11DP10NMATMA1CT-ND | 278-IPD11DP10NMATMA1 | 980925-IPD11DP10NMATMA1 | IPD11DP10NMATMA1 | 90AJ6111 |
| Product Name | MOSFETs | Single FETs, MOSFETs | 100V TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 100V, To-252-3 Rohs Compliant Infineon |
| Package Type | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | SOT3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
| Polarity | P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts |
