Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD038N04NG IPD038N04NG

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965428-IPD038N04NG Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Number of Elements: 1 Input Capacitance: 4.5 nF Power Dissipation: 94 W Number of Pins: 3 Rise Time: 4.2 ns Fall Time: 5.2 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-252 Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 94 W Turn-On Delay Time: 17 ns Continuous Drain Current (ID): 90 A Drain to Source Breakdown Voltage: 40 V Turn-Off Delay Time: 20 ns Drain to Source Resistance: 3.8 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.8 mΩ
Request a Quote
Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965428-IPD038N04NG Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Number of Elements: 1 Input Capacitance: 4.5 nF Power Dissipation: 94 W Number of Pins: 3 Rise Time: 4.2 ns Fall Time: 5.2 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-252 Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 94 W Turn-On Delay Time: 17 ns Continuous Drain Current (ID): 90 A Drain to Source Breakdown Voltage: 40 V Turn-Off Delay Time: 20 ns Drain to Source Resistance: 3.8 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.8 mΩ
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD038N04NG - 965428-IPD038N04NG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD038N04NG
965428-IPD038N04NG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD038N04NG 965428-IPD038N04NG
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965428-IPD038N04NG Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Number of Elements: 1 Input Capacitance: 4.5 nF Power Dissipation: 94 W Number of Pins: 3 Rise Time: 4.2 ns Fall Time: 5.2 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-252 Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 94 W Turn-On Delay Time: 17 ns Continuous Drain Current (ID): 90 A Drain to Source Breakdown Voltage: 40 V Turn-Off Delay Time: 20 ns Drain to Source Resistance: 3.8 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.8 mΩ

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 965428-IPD038N04NG
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 40 V
Number of Elements: 1
Input Capacitance: 4.5 nF
Power Dissipation: 94 W
Number of Pins: 3
Rise Time: 4.2 ns
Fall Time: 5.2 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-252
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Single
Max Power Dissipation: 94 W
Turn-On Delay Time: 17 ns
Continuous Drain Current (ID): 90 A
Drain to Source Breakdown Voltage: 40 V
Turn-Off Delay Time: 20 ns
Drain to Source Resistance: 3.8 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 3.8 mΩ

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 965428-IPD038N04NG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD038N04NG
V(BR)DSS 40 volts
Unlock Full Specs
to access all available technical data

Similar Products

 - 2EDL8013GXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type PG-VDSON-8
Packing Method Tape Reel; Tape & Reel
View Details
Dual N-channel 100 V, 121 mΩ standard level MOSFET - BUK7K134-100EX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
IDSS 9800 milliamps
View Details
6 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810025SCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers
CSD18537NQ5A 60-V N-Channel NexFET? Power MOSFET - CSD18537NQ5A - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 72000 milliamps
View Details
9 suppliers