MOSFET N-CH 30V 90A TO252-3 Product overview: IPD031N03M G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD031N03M G can be used for catalog matching and distributor lookup.
N-Channel 30V 90A (Tc) Surface Mount PG-TO252-3-11
Manufacturer: Infineon Technologies
Win Source Part Number: 874757-IPD031N03M G
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 30 V 90A (Tc) - Surface Mount PG-TO252-3-11
Package: Reel - TR
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: Surface Mount
Part Status: Discontinued at Digi-Key
Categories: Discrete Semiconductor Products
Case / Package: PG-TO252-3-11
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: SP000313126, IPD031N03M GINCT-ND, IPD031N03M GINTR, IPD031N03M GINTR-ND, IPD031N03M GINDKR, IPD031N03M GINDKR-ND, IPD031N03MGINTR, IPD031N03MG, IPD031N03M G-ND, IPD031N03MGINCT, IPD031N03MGINDKR, IPD031N03M GINCT
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD031N03M G | IPD031N03MGINTR-ND | 874757-IPD031N03M G |
| Product Name | 30V 90A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD031N03M G |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |