Infineon MOSFET IPD30N06S2L13ATMA4
Infineon MOSFET IPD30N06S2L13ATMA4
Infineon MOSFET IPD30N06S2L13ATMA4
MOSFET N-CH 55V 30A TO252-31
N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 55V 30A TO252-31 Product overview: IPD30N06S2L13ATMA4 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N06S2L13ATM
Manufacturer: Infineon Technologies
Win Source Part Number: 124515-IPD30N06S2L13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3-11
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 80μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 55V, 30A, 175DEG C, 136W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
MOSFET N-CH 55V 30A TO252-31
POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.0106 OHM, TO-252 (DPAK), SURFACE MOUNT, MARKING 2N06L13. FREE 2 YEAR RADWELL WARRANTY
INFINEON IPD30N06S2L-13MOSFET
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2144373 | 2144374P | IPD30N06S2L13ATMA4 | IPD30N06S2L13ATMA4TR-ND | 278-IPD30N06S2L13ATMA4 | 124515-IPD30N06S2L13ATMA4 | 12AC9709 | IPD30N06S2L13ATMA4 | IPD30N06S2L13ATMA4 | 108088657 | 376-IPD30N06S2L13ATMA4 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 55V 30A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD30N06S2L13ATMA4 | Mosfet, N-Ch, 55V, 30A, 175Deg C, 136W; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| Package Type | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | SOT3; TO-252 (DPAK); PG-TO252-3-11 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |||
| Number of units in IC | 1 | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts |
