Infineon Technologies AG MOSFETs IPD30N06S2L13ATMA4

Description
Infineon MOSFET IPD30N06S2L13ATMA4
Request a Quote Datasheet
Description
Infineon MOSFET IPD30N06S2L13ATMA4
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
MOSFETs - 2144373 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144373
MOSFETs 2144373
Infineon MOSFET IPD30N06S2L13ATMA4

Infineon MOSFET IPD30N06S2L13ATMA4

Supplier's Site
MOSFETs - 2144374 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144374
MOSFETs 2144374
Infineon MOSFET IPD30N06S2L13ATMA4

Infineon MOSFET IPD30N06S2L13ATMA4

Supplier's Site
MOSFETs - 2144374P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144374P
MOSFETs 2144374P
Infineon MOSFET IPD30N06S2L13ATMA4

Infineon MOSFET IPD30N06S2L13ATMA4

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD30N06S2L13ATMA4 - 124515-IPD30N06S2L13ATMA4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD30N06S2L13ATMA4
124515-IPD30N06S2L13ATMA4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD30N06S2L13ATMA4 124515-IPD30N06S2L13ATMA4
Manufacturer: Infineon Technologies Win Source Part Number: 124515-IPD30N06S2L13 ATMA4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3-11 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2V @ 80μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 124515-IPD30N06S2L13ATMA4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3-11
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 80μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPD30N06S2L13ATMA4TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD30N06S2L13ATMA4TR-ND
Single FETs, MOSFETs IPD30N06S2L13ATMA4TR-ND
N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Single FETs, MOSFETs - IPD30N06S2L13ATMA4DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD30N06S2L13ATMA4DKR-ND
Single FETs, MOSFETs IPD30N06S2L13ATMA4DKR-ND
N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Single FETs, MOSFETs - IPD30N06S2L13ATMA4CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD30N06S2L13ATMA4CT-ND
Single FETs, MOSFETs IPD30N06S2L13ATMA4CT-ND
N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Single FETs, MOSFETs - IPD30N06S2L13ATMA4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD30N06S2L13ATMA4
Single FETs, MOSFETs IPD30N06S2L13ATMA4
MOSFET N-CH 55V 30A TO252-31

MOSFET N-CH 55V 30A TO252-31

Supplier's Site Datasheet
Singapore
55V 30A TO252 MOSFET Transistor
278-IPD30N06S2L13ATMA4
55V 30A TO252 MOSFET Transistor 278-IPD30N06S2L13ATMA4
MOSFET N-CH 55V 30A TO252-31 Product overview: IPD30N06S2L13ATMA4 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N06S2L13ATM A4 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 30A TO252-31 Product overview: IPD30N06S2L13ATMA4 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N06S2L13ATMA4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CHANNEL_55/60V

MOSFET N-CHANNEL_55/60V

Buy Now Datasheet
Mosfet, N-Ch, 55V, 30A, 175Deg C, 136W; Channel Type Infineon - 12AC9709 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 55V, 30A, 175Deg C, 136W; Channel Type Infineon
12AC9709
Mosfet, N-Ch, 55V, 30A, 175Deg C, 136W; Channel Type Infineon 12AC9709
MOSFET, N-CH, 55V, 30A, 175DEG C, 136W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, N-CH, 55V, 30A, 175DEG C, 136W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 108088657 - Radwell International
Willingboro, NJ, United States
Transistor
108088657
Transistor 108088657
POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.0106 OHM, TO-252 (DPAK), SURFACE MOUNT, MARKING 2N06L13. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.0106 OHM, TO-252 (DPAK), SURFACE MOUNT, MARKING 2N06L13. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD30N06S2L13ATMA4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD30N06S2L13ATMA4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD30N06S2L13ATMA4
MOSFET N-CH 55V 30A TO252-31

MOSFET N-CH 55V 30A TO252-31

Supplier's Site
INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V - 376-IPD30N06S2L13ATMA4 - Utmel Electronic Limited
Hong Kong, China
INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V
376-IPD30N06S2L13ATMA4
INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V 376-IPD30N06S2L13ATMA4
INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V

INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2144373 2144374P 124515-IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4TR-ND IPD30N06S2L13ATMA4 278-IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 12AC9709 108088657 IPD30N06S2L13ATMA4 376-IPD30N06S2L13ATMA4
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD30N06S2L13ATMA4 Single FETs, MOSFETs Single FETs, MOSFETs 55V 30A TO252 MOSFET Transistor MOSFET Mosfet, N-Ch, 55V, 30A, 175Deg C, 136W; Channel Type Infineon Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs INFINEON IPD30N06S2L-13MOSFET Transistor, N Channel, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); Dpak (to-252) TO-252 (DPAK); TO-252 SOT3; TO-252 (DPAK); PG-TO252-3-11 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Number of units in IC 1 1
V(BR)DSS 55 volts 55 volts 55 volts
PD 136000 milliwatts 136000 milliwatts 136 milliwatts 136000 milliwatts
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