IPD30N12S3L-31 is an N-channel enhancement mode MOSFET designed for automotive applications, packaged in a PG-TO252-3-11 case. It has a maximum drain-source voltage of 120 V, continuous drain current of 30 A at 25⁰C, and a maximum on-state resistance of 31 mΩ at 10 V gate drive. The device operates at temperatures up to 175⁰C, is AEC-Q101 qualified, and supports peak reflow temperatures up to 260⁰C. It is RoHS compliant and 100% avalanche tested, with single-pulse avalanche energy of 138 mJ and avalanche current of 30 A.
Summary of Features
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD30N12S3L-31 |
| Product Name | Automotive MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| VGS(off) | 1.7 volts |
| rDS(on) | 0.0310 ohms |
