MOSFET N-CH 30V 30A TO252-3 Product overview: IPD135N03LGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD135N03LGATMA1
Win Source Part Number: 996599-IPD135N03LGAT
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 31W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD135N03L G,SP000796912,IPD135
Base Product Number: IPD135
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3
N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3
N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 30V 30A TO252-3
MOSFET Transistor, N Channel, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V RoHS Compliant: Yes
MOSFET N-CH 30V 30A TO252-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPD135N03LGATMA1 | 996599-IPD135N03LGATMA1 | IPD135N03LGATMA1CT-ND | IPD135N03LGATMA1 | 50Y2027 | IPD135N03LGATMA1 | IPD135N03LGATMA1 |
| Product Name | 30V 30A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 30 A, 30 V, 0.0113 Ohm, 10 V, 2.2 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| Transconductance | 0.0220 kS | ||||||
| PD | 31 milliwatts | 31000 milliwatts | 31000 milliwatts |
