N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11
N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11
N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11
Infineon MOSFET IPD25N06S4L30ATMA2
Infineon MOSFET IPD25N06S4L30ATMA2
Infineon MOSFET IPD25N06S4L30ATMA2
MOSFET N-CH 60V 25A TO252-31 Product overview: IPD25N06S4L30ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 25A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 25A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD25N06S4L30ATM
Manufacturer: Infineon Technologies
Win Source Part Number: 776862-IPD25N06S4L30
Series: Automotive, AEC-Q101, OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Family Name: IPD25N06S4L-30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TO252-3-11
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.2V @ 8μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1220pF @ 25V
Vgs (Maximum): ±16V
Power Dissipation (Maximum): 29W (Tc)
Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): RSD221N06TL; NTD32N06T4G; STD30NE06LT4; 2SK3385-Z-AZ;
Introduction Date: March 23, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 25A TO252-31
MOSFET N-CH 60V 25A TO252-31
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD25N06S4L30ATMA2DKR-ND | 2152503 | 2152504P | 278-IPD25N06S4L30ATMA2 | 776862-IPD25N06S4L30ATMA2 | IPD25N06S4L30ATMA2 | 43AC3267 | IPD25N06S4L30ATMA2 | IPD25N06S4L30ATMA2 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 60V 25A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD25N06S4L30ATMA2 | MOSFET | Mosfet, Aec-Q101, N-Ch, 60V, 25A, To-252; Transistor Polarity Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | Tape & Reel (TR) | SOT3; TO-252 (DPAK) | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | 16.3 nC @ 10 V | |
| Transistor Grade / Operating Range | Automotive | ||||||||
| Transistor Technology / Material | Si | MOSFET (Metal Oxide) | |||||||
| MOSFET Operating Mode | Enhancement | Enhancement |
