Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA2

Description
Manufacturer: Infineon Technologies Win Source Part Number: 776862-IPD25N06S4L30 ATMA2 Series: Automotive, AEC-Q101, OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Family Name: IPD25N06S4L-30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO252-3-11 Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.2V @ 8μA Gate Charge (Qg) (Maximum) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1220pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 29W (Tc) Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): RSD221N06TL; NTD32N06T4G; STD30NE06LT4; 2SK3385-Z-AZ; Introduction Date: March 23, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 776862-IPD25N06S4L30 ATMA2 Series: Automotive, AEC-Q101, OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Family Name: IPD25N06S4L-30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO252-3-11 Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.2V @ 8μA Gate Charge (Qg) (Maximum) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1220pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 29W (Tc) Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): RSD221N06TL; NTD32N06T4G; STD30NE06LT4; 2SK3385-Z-AZ; Introduction Date: March 23, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Product
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD25N06S4L30ATMA2 - 776862-IPD25N06S4L30ATMA2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD25N06S4L30ATMA2
776862-IPD25N06S4L30ATMA2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD25N06S4L30ATMA2 776862-IPD25N06S4L30ATMA2
Manufacturer: Infineon Technologies Win Source Part Number: 776862-IPD25N06S4L30 ATMA2 Series: Automotive, AEC-Q101, OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Family Name: IPD25N06S4L-30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO252-3-11 Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.2V @ 8μA Gate Charge (Qg) (Maximum) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1220pF @ 25V Vgs (Maximum): ±16V Power Dissipation (Maximum): 29W (Tc) Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): RSD221N06TL; NTD32N06T4G; STD30NE06LT4; 2SK3385-Z-AZ; Introduction Date: March 23, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776862-IPD25N06S4L30ATMA2
Series: Automotive, AEC-Q101, OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Family Name: IPD25N06S4L-30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TO252-3-11
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.2V @ 8μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1220pF @ 25V
Vgs (Maximum): ±16V
Power Dissipation (Maximum): 29W (Tc)
Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): RSD221N06TL; NTD32N06T4G; STD30NE06LT4; 2SK3385-Z-AZ;
Introduction Date: March 23, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
60V 25A TO252 MOSFET Transistor
278-IPD25N06S4L30ATMA2
60V 25A TO252 MOSFET Transistor 278-IPD25N06S4L30ATMA2
MOSFET N-CH 60V 25A TO252-31 Product overview: IPD25N06S4L30ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 25A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 25A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD25N06S4L30ATM A2 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 25A TO252-31 Product overview: IPD25N06S4L30ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 25A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 25A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD25N06S4L30ATMA2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2152503 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2152503
MOSFETs 2152503
Infineon MOSFET IPD25N06S4L30ATMA2

Infineon MOSFET IPD25N06S4L30ATMA2

Supplier's Site
MOSFETs - 2152504 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2152504
MOSFETs 2152504
Infineon MOSFET IPD25N06S4L30ATMA2

Infineon MOSFET IPD25N06S4L30ATMA2

Supplier's Site
MOSFETs - 2152504P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2152504P
MOSFETs 2152504P
Infineon MOSFET IPD25N06S4L30ATMA2

Infineon MOSFET IPD25N06S4L30ATMA2

Supplier's Site
Single FETs, MOSFETs - IPD25N06S4L30ATMA2TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD25N06S4L30ATMA2TR-ND
Single FETs, MOSFETs IPD25N06S4L30ATMA2TR-ND
N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Single FETs, MOSFETs - IPD25N06S4L30ATMA2DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD25N06S4L30ATMA2DKR-ND
Single FETs, MOSFETs IPD25N06S4L30ATMA2DKR-ND
N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

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Single FETs, MOSFETs - IPD25N06S4L30ATMA2CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD25N06S4L30ATMA2CT-ND
Single FETs, MOSFETs IPD25N06S4L30ATMA2CT-ND
N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

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Single FETs, MOSFETs - IPD25N06S4L30ATMA2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD25N06S4L30ATMA2
Single FETs, MOSFETs IPD25N06S4L30ATMA2
MOSFET N-CH 60V 25A TO252-31

MOSFET N-CH 60V 25A TO252-31

Supplier's Site Datasheet
Mosfet, Aec-Q101, N-Ch, 60V, 25A, To-252; Transistor Polarity Infineon - 43AC3267 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 60V, 25A, To-252; Transistor Polarity Infineon
43AC3267
Mosfet, Aec-Q101, N-Ch, 60V, 25A, To-252; Transistor Polarity Infineon 43AC3267
MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET MOSFET

MOSFET MOSFET

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD25N06S4L30ATMA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD25N06S4L30ATMA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD25N06S4L30ATMA2
MOSFET N-CH 60V 25A TO252-31

MOSFET N-CH 60V 25A TO252-31

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 776862-IPD25N06S4L30ATMA2 278-IPD25N06S4L30ATMA2 2152503 2152504P IPD25N06S4L30ATMA2TR-ND IPD25N06S4L30ATMA2 43AC3267 IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD25N06S4L30ATMA2 60V 25A TO252 MOSFET Transistor MOSFETs MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 60V, 25A, To-252; Transistor Polarity Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 29000 milliwatts 29 milliwatts 29000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK) Tape & Reel (TR) TO-252 (DPAK); Dpak (to-252) TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 16.3 nC @ 10 V
Packing Method Tape Reel; Reel package Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
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