Infineon Technologies AG Single FETs, MOSFETs IPD30N06S2L23ATMA3

Description
IPD30N06 - 55V-60V N-Channel Automotive MOSFET
Request a Quote Datasheet
Description
IPD30N06 - 55V-60V N-Channel Automotive MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IPD30N06S2L23ATMA3 - Rochester Electronics
Newburyport, MA, United States
IPD30N06 - 55V-60V N-Channel Automotive MOSFET

IPD30N06 - 55V-60V N-Channel Automotive MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD30N06S2L23ATMA3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD30N06S2L23ATMA3CT-ND
Single FETs, MOSFETs IPD30N06S2L23ATMA3CT-ND
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

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Single FETs, MOSFETs - IPD30N06S2L23ATMA3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD30N06S2L23ATMA3TR-ND
Single FETs, MOSFETs IPD30N06S2L23ATMA3TR-ND
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

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Single FETs, MOSFETs - IPD30N06S2L23ATMA3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD30N06S2L23ATMA3DKR-ND
Single FETs, MOSFETs IPD30N06S2L23ATMA3DKR-ND
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

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Discrete Semiconductor Products - 108656-IPD30N06S2L23ATMA3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
108656-IPD30N06S2L23ATMA3
Discrete Semiconductor Products 108656-IPD30N06S2L23ATMA3
Manufacturer: Infineon Technologies Win Source Part Number: 108656-IPD30N06S2L23 ATMA3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: OptiMOS? Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Manufacturer Device Package: PG-TO252-3-11 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2V @ 50μA Gate Charge (Qg) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) @ Vds: 1091pF @ 25V Power - Max: 100W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 108656-IPD30N06S2L23ATMA3
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS?
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package: PG-TO252-3-11
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 50μA
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) @ Vds: 1091pF @ 25V
Power - Max: 100W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
55V 30A TO252 MOSFET Transistor
278-IPD30N06S2L23ATMA3
55V 30A TO252 MOSFET Transistor 278-IPD30N06S2L23ATMA3
MOSFET N-CH 55V 30A TO252-31 Product overview: IPD30N06S2L23ATMA3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N06S2L23ATM A3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 30A TO252-31 Product overview: IPD30N06S2L23ATMA3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N06S2L23ATMA3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2605129P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605129P
MOSFETs 2605129P
Infineon MOSFET IPD30N06S2L-23

Infineon MOSFET IPD30N06S2L-23

Supplier's Site
MOSFETs - 2605128 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605128
MOSFETs 2605128
Infineon MOSFET IPD30N06S2L-23

Infineon MOSFET IPD30N06S2L-23

Supplier's Site
MOSFETs - 2605129 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605129
MOSFETs 2605129
Infineon MOSFET IPD30N06S2L-23

Infineon MOSFET IPD30N06S2L-23

Supplier's Site
Mosfet, N-Ch, 55V, 30A, 175Deg C, 100W; Channel Type Infineon - 12AC9710 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 55V, 30A, 175Deg C, 100W; Channel Type Infineon
12AC9710
Mosfet, N-Ch, 55V, 30A, 175Deg C, 100W; Channel Type Infineon 12AC9710
MOSFET, N-CH, 55V, 30A, 175DEG C, 100W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, N-CH, 55V, 30A, 175DEG C, 100W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD30N06S2L23ATMA3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD30N06S2L23ATMA3
Single FETs, MOSFETs IPD30N06S2L23ATMA3
MOSFET N-CH 55V 30A TO252-31

MOSFET N-CH 55V 30A TO252-31

Supplier's Site Datasheet
MOSFET N-CHANNEL_55/60V

MOSFET N-CHANNEL_55/60V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD30N06S2L23ATMA3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD30N06S2L23ATMA3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD30N06S2L23ATMA3
MOSFET N-CH 55V 30A TO252-31

MOSFET N-CH 55V 30A TO252-31

Supplier's Site
Transistor - 108070608 - Radwell International
Willingboro, NJ, United States
Transistor
108070608
Transistor 108070608
POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 55V, 0.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 DPAK-3, MARKED AS 2N06L23. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 55V, 0.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 DPAK-3, MARKED AS 2N06L23. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3CT-ND 108656-IPD30N06S2L23ATMA3 278-IPD30N06S2L23ATMA3 2605129P 12AC9710 IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 108070608
Product Name Single FETs, MOSFETs Discrete Semiconductor Products 55V 30A TO252 MOSFET Transistor MOSFETs Mosfet, N-Ch, 55V, 30A, 175Deg C, 100W; Channel Type Infineon Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) Tape & Reel (TR) TO-252 (DPAK); PG-TO-252 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel(TR) Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Grade / Operating Range Automotive
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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