IPD30N06 - 55V-60V N-Channel Automotive MOSFET
MOSFET N-CH 55V 30A TO252-31 Product overview: IPD30N06S2L23ATMA3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N06S2L23ATM
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
Manufacturer: Infineon Technologies
Win Source Part Number: 108656-IPD30N06S2L23
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS?
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package: PG-TO252-3-11
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 50μA
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) @ Vds: 1091pF @ 25V
Power - Max: 100W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET N-CH 55V 30A TO252-31
MOSFET, N-CH, 55V, 30A, 175DEG C, 100W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 55V, 0.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 DPAK-3, MARKED AS 2N06L23. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 55V 30A TO252-31
| Rochester Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IPD30N06S2L23ATMA3 | 2605129P | 278-IPD30N06S2L23ATMA3 | IPD30N06S2L23ATMA3TR-ND | 108656-IPD30N06S2L23ATMA3 | IPD30N06S2L23ATMA3 | IPD30N06S2L23ATMA3 | 12AC9710 | 108070608 | IPD30N06S2L23ATMA3 |
| Product Name | MOSFETs | 55V 30A TO252 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 55V, 30A, 175Deg C, 100W; Channel Type Infineon | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPak | TO-252 (DPAK); PG-TO-252 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Reel(TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 55 volts | 55 volts |
