MOSFET N-CH 500V 13A TO252 Product overview: IPD50R280CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 13A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 13A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R280CEAUMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 776863-IPD50R280CEAU
Series: CoolMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Family Name: IPD50R280CE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Manufacturer Package: PG-TO-252
Channel Type Type: N
Drain Source Voltage: 550V
Vgs(th) (Maximum) @ Id: 3.5V @ 350μA
Gate Charge (Qg) (Maximum) @ Vgs: 32.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 773pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 119W (Tc)
Rds On (Maximum) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
Alternative Parts (Cross-Reference): STD14NM50N; STD14NM50NAG; STD13N50DM2AG; STD15N50M2AG;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
N-Channel 550V 13A (Ta) 119W (Tc) Surface Mount PG-TO252-3
N-Channel 550V 13A (Ta) 119W (Tc) Surface Mount PG-TO252-3
N-Channel 550V 13A (Ta) 119W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 500V 13A TO252
MOSFET N-CH 500V 13A TO252
MOSFET N-CH 500V 13A PG-TO252
MOSFET, N-CH, 500V, 18.1A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD50R280CEAUMA1 | 2605134P | 776863-IPD50R280CEAUMA1 | IPD50R280CEAUMA1TR-ND | IPD50R280CEAUMA1 | IPD50R280CEAUMA1 | 376-IPD50R280CEAUMA1 | IPD50R280CEAUMA1 | 12AC9712 |
| Product Name | 500V 13A TO252 MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R280CEAUMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 500V 13A PG-TO252 | MOSFET | Mosfet, N-Ch, 500V, 18.1A, To-252; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 550 volts | 500 volts | |||||||
| PD | 119 milliwatts | 119000 milliwatts | 119000 milliwatts | 119000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
