The IPD50N06S2L-13 is an N-channel logic-level enhancement mode MOSFET designed for automotive applications. It is packaged in a PG-TO252-3-11 surface-mount case and supports an operating temperature range of -55°C to +175°C. The device has a maximum continuous drain current of 50 A and a drain-source on-state resistance of 12.7 mΩ at V_GS = 4.5 V and I_D = 34 A, or 10.2 mΩ at V_GS = 10 V. It is AEC-Q101 qualified, MSL1 rated for peak reflow up to 260°C, and 100% avalanche tested with a single-pulse avalanche energy rating of 240 mJ. The gate-source voltage is rated to ±20 V and the package is RoHS-compliant and lead-free.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186139-IPD50N06S2L-
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
| Product Number | IPD50N06S2L-13 | 1186139-IPD50N06S2L-13 | IPD50N06S2L-13 |
| Product Name | Automotive MOSFET | Electronic Surplus - IPD50N06S2L-13 | Transistors |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| VGS(off) | 1.2 to 2 volts | ||
| rDS(on) | 0.0127 ohms |