CONSUMER Product overview: IPD50R950CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R950CEAUMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 1045874-IPD50R950CEA
Categories: Discrete Semiconductor Products
Status: Active
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 500V, 6.6A, TO-252 ROHS COMPLIANT: YES
CONSUMER
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD50R950CEAUMA1 | 1045874-IPD50R950CEAUMA1 | 448-IPD50R950CEAUMA1DKR-ND | IPD50R950CEAUMA1 | 2583847 | 38AJ3773 | IPD50R950CEAUMA1 | IPD50R950CEAUMA1 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R950CEAUMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Mosfet, N-Ch, 500V, 6.6A, To-252 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 500 volts | 500 volts | ||||||
| PD | 53 milliwatts | 53000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
