N-channel MOSFET in a DPAK-2 package with a drain-source voltage rating of 30 V, a continuous drain current of 90 A at 25 °C, and a drain-source on-state resistance of 3.1 mΩ at 10 V gate-source voltage. The device has a gate charge of 21 nC and a turn-on delay time of 12 ns. It is AEC-Q101 qualified and optimized for automotive applications.
MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD031N03L G |
| Product Name | MOSFET |
