Infineon Technologies AG Discrete Semiconductor Products IPB80N08S2L-07

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017323-IPB80N08S2L-0 7 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: OptiMOS Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Manufacturer Device Package: PG-TO263-3-2 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250μA Gate Charge (Qg) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) @ Vds: 5400pF @ 25V Power - Max: 300W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017323-IPB80N08S2L-0 7 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: OptiMOS Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Manufacturer Device Package: PG-TO263-3-2 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250μA Gate Charge (Qg) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) @ Vds: 5400pF @ 25V Power - Max: 300W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - 017323-IPB80N08S2L-07 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
017323-IPB80N08S2L-07
Discrete Semiconductor Products 017323-IPB80N08S2L-07
Manufacturer: Infineon Technologies Win Source Part Number: 017323-IPB80N08S2L-0 7 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: OptiMOS Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Manufacturer Device Package: PG-TO263-3-2 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250μA Gate Charge (Qg) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) @ Vds: 5400pF @ 25V Power - Max: 300W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017323-IPB80N08S2L-07
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Device Package: PG-TO263-3-2
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 250μA
Gate Charge (Qg) @ Vgs: 233nC @ 10V
Input Capacitance (Ciss) @ Vds: 5400pF @ 25V
Power - Max: 300W
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
75V 80A MOSFET Transistor
2088-IPB80N08S2L-07
75V 80A MOSFET Transistor 2088-IPB80N08S2L-07
MOSFETs N-Ch 75V 80A D2PAK-2 OptiMOS Product overview: IPB80N08S2L-07 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB80N08S2L-07 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 75V 80A D2PAK-2 OptiMOS Product overview: IPB80N08S2L-07 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB80N08S2L-07 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors IPB80N08S2L-07
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017323-IPB80N08S2L-07 2088-IPB80N08S2L-07 IPB80N08S2L-07 IPB80N08S2L-07
Product Name Discrete Semiconductor Products 75V 80A MOSFET Transistor Transistors MOSFET
Polarity N-Channel N-Channel
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3 Reel
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