MOSFET N-CH 100V 30A TO252-3 Product overview: IPD30N10S3L34ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 30A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 30A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD30N10S3L34ATM
Win Source Part Number: 961897-IPD30N10S3L34
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Power Dissipation (Max): 57W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IRFR3410TRPBF; IRFR3411TRPBF; STD30N10F7; NVD6495NLT4G; STD20NF10T4IPD30N10S
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD30N10S3L-34TR,IPD
Base Product Number: IPD30N10
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 100V 30A TO252-3
N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
MOSFET, AEC-Q101, N-CH, 100V, TO-252- 3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252
MOSFET N-CH 100V 30A TO252-3
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD30N10S3L34ATMA1 | 961897-IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA1DKR-ND | 79X1436 | 376-IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA1 |
| Product Name | 100V 30A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 100V, To-2523; Channel Type Infineon | Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| PD | 57 milliwatts | 57000 milliwatts | 57000 milliwatts | 57000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
