Infineon Technologies AG Automotive MOSFET IPBE65R230CFD7A

Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 230mOhm IPBE65R230CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Kelvin-source concept for further efficiency improvement Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies
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Description
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 230mOhm IPBE65R230CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Kelvin-source concept for further efficiency improvement Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies
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Datasheet
Datasheet Summary
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The IPBE65R230CFD7A is a 650V automotive-qualified N-channel MOSFET in a D⁲-PAK 7-pin package, designed for PFC and resonant switching topologies such as LLC and ZVS phase-shift full-bridge. It features an integrated fast body diode with a reverse recovery charge of 23 nC and a maximum on-state resistance of 230 mΩ. The device is rated for a continuous drain current of 17 A at T₌=150°C and a pulsed drain current of 44 A. It includes a Kelvin source contact to reduce gate-source inductance and improve switching performance, and has a creepage distance of 4.2 mm between drain and source/gate for operation up to 475 V. The MOSFET is 100% avalanche tested and meets AEC-Q101 qualifications.

Datasheet Summary
Powered by GS/AI

The IPBE65R230CFD7A is a 650V automotive-qualified N-channel MOSFET in a D⁲-PAK 7-pin package, designed for PFC and resonant switching topologies such as LLC and ZVS phase-shift full-bridge. It features an integrated fast body diode with a reverse recovery charge of 23 nC and a maximum on-state resistance of 230 mΩ. The device is rated for a continuous drain current of 17 A at T₌=150°C and a pulsed drain current of 44 A. It includes a Kelvin source contact to reduce gate-source inductance and improve switching performance, and has a creepage distance of 4.2 mm between drain and source/gate for operation up to 475 V. The MOSFET is 100% avalanche tested and meets AEC-Q101 qualifications.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPBE65R230CFD7A - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPBE65R230CFD7A
Automotive MOSFET IPBE65R230CFD7A
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 230mOhm IPBE65R230CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V. Summary of Features AEC-Q101 qualified Battery voltages up to 475V without compromising on reliability standards Efficiency improvements in hard- and soft-switching topologies up to 98.4% Kelvin-source concept for further efficiency improvement Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA Benefits Highest reliability in the field meeting automotive lifetime requirements Enabling of higher power density designs Scalable as designed for use in PFC and DC-DC stage Granular portfolio available Potential Applications On-board chargers Hard-switching topologies (with SiC diode) PFC boost-stages DC-DC stage of on-board chargers HV-LV DC-DC converters LLC or full-bridge phase shift (ZVS) Auxiliary power supplies

650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A

The 230mOhm IPBE65R230CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.

When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.


Summary of Features

  • AEC-Q101 qualified
  • Battery voltages up to 475V without compromising on reliability standards
  • Efficiency improvements in hard- and soft-switching topologies up to 98.4%
  • Kelvin-source concept for further efficiency improvement
  • Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA

Benefits

  • Highest reliability in the field meeting automotive lifetime requirements
  • Enabling of higher power density designs
  • Scalable as designed for use in PFC and DC-DC stage
  • Granular portfolio available

Potential Applications

  • On-board chargers
    • Hard-switching topologies (with SiC diode)
    • PFC boost-stages
    • DC-DC stage of on-board chargers
  • HV-LV DC-DC converters
    • LLC or full-bridge phase shift (ZVS)
  • Auxiliary power supplies
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPBE65R230CFD7A
Product Name Automotive MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.2300 ohms
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