Rochester Electronics Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 11.8A, 200V, 0.15ohm, N-Channel Power MOSFET, TO-220F | |
| 1200 V, 600 A common emitter IGBT module | |
| 15A, 500V, 0.38ohm, N-Channel Power MOSFET, TO-220AB | |
| 21A, 60V, N-Channel, MOSFET | |
| 3.6A, 500V, N-Channel, MOSFET | |
| 300V, 70A PDP IGBT | |
| 4.5A, 600V, 2ohm, N-Channel Power MOSFET, D2PAK | |
| 62 mm C-Series module with CoolSiC Trench MOSFET | |
| 88A, 60V, N-Channel Power MOSFET, TO-220AB | |
| AC Input-Transistor Output Optocoupler, 1-Element, 5000V Isolation | |
| AC Input-Transistor Output Optocoupler, 3750V Isolation | |
| EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC / TIM | |
| EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC | |
| EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC | |
| EconoPACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |
| EcoSPARK 360V, N-Channel Ignition IGBT | |
| ESBC Rated NPN Power Transistor | |
| FDP100N10 - Power Field-Effect Transistor, 75A, 100V, 0.01ohm, N-Channel, MOSFET, TO-220AB | |
| FDP10N60NZ - Power Field-Effect Transistor, 10A, 600V, 0.75ohm, N-Channel, MOSFET, TO-220AB | |
| FDP26N40 - Power MOSFET, N-Channel, UniFET, 400V, 26A | |
| FDPC8016S - PowerTrench25V Asymmetric Dual N‐Channel MOSFET | |
| FDPF18N50 - 500V N-Channel MOSFET | |
| FDPF5N50 - N-Channel UniFET II FRFET MOSFET 500V, 4,2A | |
| FDPF9N50 - 500V N-Channel UNIFET2 MOSFET | |
| FDS6679 - P-Channel PowerTrench MOSFET | |
| FDS8878 - 30V N-Channel PowerTrench MOSFET | |
| FDZ1827N - CommonDrain N-Ch. 2.5 V PowerTRENCH MOSFET | |
| FF1000R17 - IGBT Module | |
| FF100R12YT3B60BO- IGBT MOD 1.2kV 1.65kW Bulk | |
| FF1400R17IP4 - IGBT Emitter Controlled Diode 1,7kV | |
| FF1500R17IP5R - IGBT5 Emitter Controlled 5 Diode 1,7kV | |
| FF150R12 - IGBT Module | |
| FF17MR12W1M1H_B11 - EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC | |
| FF225R65 - IGBT MOD 5.9kV 225A 1MW Module Carton | |
| FF400R12 - IGBT Module | |
| FF450R12 - IGBT Module | |
| FF600R12 - IGBT Module | |
| FF800R12KE7E - 62 mm C-Series module with TRENCHSTOP IGBT7 | |
| FFXR07M4P - IGBT MOD 650V 300A 20mW Module Carton | |
| FFXR12K3H - IGBT MOD 1.2kV 225A 780W Module Bulk | |
| FFXR12KX4PH - IGBT MOD 1.2kV 600A Module Carton | |
| FGA180N33ATD - IGBT-Single 330V 180A 390W (Tc) TO-3P-3 Tube | |
| FGA3060ADF - Insulated Gate Bipolar Transistor | |
| FGA40T65SHDF - Insulated Gate Bipolar Transistor | |
| FGBS3040 - Smart IGN-IGBT TO263-7 | |
| FGD3040G2 - IGBT 400V 41A 150W DPAK | |
| FGH40T65SHD - FS3TIGBT TO247 40A 650V | |
| FGH75T65SHD - IGBT, Field Stop, Trench, 75A 650V | |
| FGH75T65SHDT-F155-01 - FS3TIGBT TO247 75A 650V | |
| FGH75T65SQD - IGBT, Field Stop, Trench, 75A 650V | |
| FGI3040G2-F085C - Ignition IGBT, N-Channel Ignition, DPAK, 450V 1.3V, EcoSPARK II | |
| FLS2100XS - Half Bridge Based MOSFET Driver, 32A | |
| FOD3182 - 3 A Output Current, High Speed MOSFET Gate Driver Optocoupler | |
| FOD785 - 4-Pin DIP Phototransistor Optocouplers | |
| FOD817C - Transistor Output Optocoupler, 5000V Isolation | |
| FOD817D - Transistor Output Optocoupler, 5000V Isolation | |
| FP100R12N - IGBT MOD 1.2kV 100A 20mW Module Carton | |
| FP10R12W1T7_B3 - 1200V, 10A PIM IGBT module | |
| FP150R07N3E4 - 650V, 150A PIM three phase input rectifier IGBT module | |
| FP150R07N3E4P - IGBT Module | |
| FP15R12W1T4 - IGBT Module | |
| FP15R12W1T7P - 1200V, 15A PIM IGBT module | |
| FP200R12 - 1200 V, 200 A PIM IGBT module | |
| FP25R12 - IGBT Module | |
| FP35R12 - IGBT Module | |
| FP35R12N2T7 - EconoPIM 2 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC | |
| FP35R12N2T7B11 - EconoPIM 2 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC LOW POWER ECONO | |
| FP50R07 - IGBT Module | |
| FP50R12 - IGBT Module | |
| FP50R12N2T7B - EconoPIM2 module with TRENCHSTOP IGBT | |
| FP75R07 - IGBT Module | |
| FP75R12 - IGBT Module | |
| FP75R12N2T4P - 1200 V, 75 A PIM three phase input rectifier IGBT module | |
| FP75R17N3E4 - EconoPIM 3 module with Trench Fieldstop IGBT4 | |
| FP75R17N3E4P - EconoPIM 3 module with Trench Fieldstop IGBT4 | |
| FPXR12W17J - IGBT MOD 1.2kV 10A 20mW Carton | |
| FPXR12W1TXPJ - IGBT MOD 1.2kV 15A 20mW Module Carton | |
| FPXR12W2X7J - EconoPIM2 module IGBT | |
| FPXR12W3X7J - IGBT MOD 1.2kV 100A 20mW Module Carton | |
| FQD12N20L - Power MOSFET, N-Channel, Logic Level, QFET, 200 V, 9.0 A | |
| FQN1N60 - N-Channel MOSFET | |
| FQN1N60C - MOSFET N-Channel QFET 600 V, 0.3 A, 11.5 | |
| FS100R12 - IGBT Module | |
| FS150R07 - IGBT Module | |
| FS150R12 - IGBT Module | |
| FS200R12KT4RP - IGBT Module | |
| FS225R17 - IGBT Module | |
| FS300R17 - IGBT Module | |
| FS300R17OE4 - IGBT Module | |
| Half Bridge Based MOSFET Driver, 32A | |
| Half Bridge Based MOSFET Driver, PDSO16 | |
| High Speed Switching N-Channel Power MosFET | |
| IGBT Module | |
| IGBT, 650 V, 40 A Field Stop Trench 650 V, 40 A Field Stop Trench IGBT | |
| IGBT, 650 V, 40 A Field Stop Trench | |
| IGBT, 650 V, 60 A Field Stop Trench | |
| IGBT, 650V, 40A Field Stop Trench | |
| Insulated Gate Bipolar Transistor Module | |
| Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 290A I(C), 400V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 41A, 390V, N-Channel | |
| Insulated Gate Bipolar Transistor, 44A, 350V, N-Channel | |
| Insulated Gate Bipolar Transistor, 450A I(C), 1700V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor | |
| MOSFET 20V 47.0 mOhm | |
| MOSFET 2N-Channel 30V 5.5A 8-SO | |
| MOSFET Integrated Smart LED Lamp Driver IC with PFC Function | |
| MOSFET N-CH 500V 13A TO-220F | |
| MOSFET N-CH 80V 25A TO-220F | |
| MOSFET N-Channel Single 600V 7.4A | |
| MOSFET P-CH 120V 15A I2PAK | |
| MOSFET P-CH 200V 7.3A TO-220F | |
| N-Channel Dual MOSFET | |
| N-Channel MOSFET | |
| N-Channel QFET MOSFET | |
| N-Channel UltraFET Power MOSFET 55V, 80A, 7m?? | |
| NPN & PNP Complementary Dual Transistor | |
| NPN Epitaxial Silicon Transistor | |
| NPN Silicon Transistor | |
| NPN Triple Diffused Planar Silicon Transistor | |
| PNP Epitaxial Silicon Transistor | |
| Power Bipolar Transistor, 12A I(C), 1-Element, NPN | |
| Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor | |
| Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 21A, 60V, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 25A, 330V, 0.23ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 3.3A, 62V, 0.11ohm, 2-Element, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 8.8A, 250V, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor | |
| Power Mosfet, N-Channel | |
| RF Small Signal Bipolar Transistor | |
| Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor | |
| Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Small Signal Field-Effect Transistor, 4.1A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Small Signal Field-Effect Transistor, N-Channel, Junction FET | |
| Small Signal Field-Effect Transistor | |
| Trans MOSFET N-CH 500V 4A T/R | |
| Trans MOSFET N-Channel 30V 3-Pin(3+Tab) TO-251 Rail | |
| Trans MOSFET N-Channel 500V 12.1A 3-Pin(2+Tab) D2PAK T/R | |
| Transistor Output Optocoupler, 1-Element, 2500V Isolation | |
| Transistor Output Optocoupler, 1-Element, 3750V Isolation | |
| Transistor Output Optocoupler, 1-Element, 5000V Isolation |
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