Infineon Technologies AG FF800R17KF6CB2NOSA2

IGBT module for high-power converters, motor drives, and traction applications, featuring a 1700 V collector-emitter voltage rating, 800 A continuous collector current, and 1600 A peak current capability. The module has a 150°C maximum operating junction temperature, a 4.85 kW power dissipation rating, and a standard housing with AlSiC base plate for enhanced thermal cycling. The integrated diode supports regenerative operation with a 1700 V reverse voltage rating and 800 A continuous forward current. Input capacitance is 65.0 nF, gate charge is 8.30 µC, and gate resistance is 1.9 Ω. The device provides 4 kV AC 1-minute insulation and is designed for high power density applications.