The FGA3060ADF is a 600 V, 30 A field stop trench IGBT in a TO-3PN package, designed for high-efficiency PFC applications such as single boost and interleaved topologies. It features a typical collector-emitter saturation voltage of 1.8 V at 30 A and 15 V gate-emitter voltage, a maximum junction temperature of 175°C, and a thermal resistance from junction to case of 0.85 °C/W for the IGBT. The device is RoHS compliant and includes a freewheeling diode with a continuous forward current rating of 1.5 A at 100°C. Its switching characteristics are optimized for operation above 20 kHz, with a maximum power dissipation of 88 W at 100°C case temperature.
FGA3060ADF - Insulated Gate Bipolar Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | FGA3060ADF-01 |
| Package Type | TO-3; TO-3PN-3 |
