onsemi 600V 4.5A MOSFET Transistor FQB5N60CTM

MOSFET N-CH 600V 4.5A D2PAK Product overview: FQB5N60CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB5N60CTM can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 714259-FQB5N60CTM
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.13W, 100W
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 4.5A
Rds On (Maximum) at Id, Vgs: 2.5Ohm at 2.25A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 670pF at 25V

N-Channel 600V 4.5A (Tc) 3.13W (Ta), 100W (Tc) Surface Mount D²PAK (TO-263)

4.5A, 600V, 2ohm, N-Channel Power MOSFET, D2PAK