Infineon Technologies AG IGBT Modules FP25R12W1T7B11BPSA1

Description
IGBT Module Trench Field Stop Three Phase Inverter 1200V 25A 20mW Chassis Mount AG-EASY1B-2
Request a Quote Datasheet
Description
IGBT Module Trench Field Stop Three Phase Inverter 1200V 25A 20mW Chassis Mount AG-EASY1B-2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - 448-FP25R12W1T7B11BPSA1-ND - DigiKey
Thief River Falls, MN, United States
IGBT Module Trench Field Stop Three Phase Inverter 1200V 25A 20mW Chassis Mount AG-EASY1B-2

IGBT Module Trench Field Stop Three Phase Inverter 1200V 25A 20mW Chassis Mount AG-EASY1B-2

Buy Now Datasheet
IGBTs - 2184349 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2184349
IGBTs 2184349
Infineon FP25R12W1T7B11BPSA1

Infineon FP25R12W1T7B11BPSA1

Supplier's Site
IGBTs - 2184350 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2184350
IGBTs 2184350
Infineon FP25R12W1T7B11BPSA1

Infineon FP25R12W1T7B11BPSA1

Supplier's Site
IGBTs - 2184350P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineon FP25R12W1T7B11BPSA1

Infineon FP25R12W1T7B11BPSA1

Supplier's Site
 - FP25R12W1T7B11BPSA1 - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

Supplier's Site Datasheet
Igbt Module, 1.2Kv, 25A, 175 Deg C; Transistor Polarity Infineon - 99AC3954 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.2Kv, 25A, 175 Deg C; Transistor Polarity Infineon
99AC3954
Igbt Module, 1.2Kv, 25A, 175 Deg C; Transistor Polarity Infineon 99AC3954
IGBT MODULE, 1.2KV, 25A, 175 DEG C; Transistor Polarity:Six N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

IGBT MODULE, 1.2KV, 25A, 175 DEG C; Transistor Polarity:Six N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FP25R12W1T7B11BPSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FP25R12W1T7B11BPSA1
Discrete Semiconductor Products - Transistors - IGBTs FP25R12W1T7B11BPSA1
IGBT MODULE 1200V 25A 20MW EASY

IGBT MODULE 1200V 25A 20MW EASY

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules IGBT Module with TRENCHSTOP IGBT7

IGBT Modules IGBT Module with TRENCHSTOP IGBT7

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Technical Specifications

  DigiKey RS Components, Ltd. Rochester Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT) Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 448-FP25R12W1T7B11BPSA1-ND 2184349 FP25R12W1T7B11BPSA1 99AC3954 FP25R12W1T7B11BPSA1 FP25R12W1T7B11BPSA1
Product Name IGBT Modules IGBTs Igbt Module, 1.2Kv, 25A, 175 Deg C; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules
Package Type Module EASY1B AG-EASY1B-711 TO-3
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