onsemi Single FETs, MOSFETs FDS6694

Description
N-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6694-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6694-ND
Single FETs, MOSFETs FDS6694-ND
N-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6694 - 067095-FDS6694 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6694
067095-FDS6694
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6694 067095-FDS6694
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067095-FDS6694 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 5V Max Input Capacitance: 1293pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067095-FDS6694
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19nC @ 5V
Max Input Capacitance: 1293pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
 - FDS6694 - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors
Product Number FDS6694-ND 067095-FDS6694 FDS6694
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6694
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO SOIC8
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data