Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
IGBT Module Trench Field Stop Three Phase Inverter 1200V 20A 20mW Chassis Mount Module
IGBT MOD, SEVEN NPN, 1.2KV, 10A; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:23Pins; RoHS Compliant: Yes
IGBT Modules LOW POWER EASY
IGBT MOD 1200V 20A 20MW
| Rochester Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FP10R12W1T4PB11BPSA1 | FP10R12W1T4PB11BPSA1-ND | 93AC7013 | FP10R12W1T4PB11BPSA1 | FP10R12W1T4PB11BPSA1 |
| Product Name | IGBT Modules | Igbt Mod, Seven Npn, 1.2Kv, 10A; Dc Collector Current Infineon | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | AG-EASY1B-411 | Module | TO-3 |
