Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
IGBT Module Trench Field Stop Three Phase Inverter 1200V 20A 20mW Chassis Mount Module
IGBT MOD 1200V 20A 20MW
IGBT Modules LOW POWER EASY
IGBT MOD, SEVEN NPN, 1.2KV, 10A; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:23Pins; RoHS Compliant: Yes
| Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FP10R12W1T4PB11BPSA1 | FP10R12W1T4PB11BPSA1-ND | FP10R12W1T4PB11BPSA1 | FP10R12W1T4PB11BPSA1 | 93AC7013 |
| Product Name | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Modules | Igbt Mod, Seven Npn, 1.2Kv, 10A; Dc Collector Current Infineon | |
| Package Type | AG-EASY1B-411 | Module | TO-3 |
