Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
Manufacturer: Infineon Technologies
Win Source Part Number: 871727-FF100R12RT4HO
Operating Temperature Range: -40°C ~ 150°C
Features: IGBT Module Trench Field Stop 2 Independent 1200 V 100 A 555 W Chassis Mount Module
Package: Module
Package: Bulk
Mounting: Chassis Mount
Family Name: FF100R12
Categories: Discrete Semiconductor Products
Case / Package: Module
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Limited
Quantity per package: 10
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FF100R12RT4-ND, SP000624754, FF100R12RT4
IGBT MOD 1200V 100A 555W Product overview: FF100R12RT4HOSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 100A, 555W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 100A, 555W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF100R12RT4HOSA1
IGBT, MODULE, N-CH, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:555W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
IGBT MOD 1200V 100A 555W
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FF100R12RT4HOSA1 | 871727-FF100R12RT4HOSA1 | 297-FF100R12RT4HOSA1 | 13AC8631 | FF100R12RT4HOSA1 |
| Product Name | IGBTs - Modules - FF100R12RT4HOSA1 | 1200V 100A 555W IGBT Transistor | Igbt, Module, N-Ch, 1.2Kv, 100A; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | AG-34MM-411 | SOT3; Module | Tray | TO-3 |
