Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPC1002S FDPC1002S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 871676-FDPC1002S Features: Mosfet Array Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 871676-FDPC1002S Features: Mosfet Array Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 1
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Datasheet
Datasheet Summary
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The FDPC1002S is a 25V Asymmetric Dual N-Channel MOSFET in a Power Clip package, designed for synchronous buck converter applications with an integrated switch node. The package measures 3.3 mm x 3.3 mm and features an exposed pad for improved thermal performance. The high-side MOSFET (Q1) has a maximum on-resistance of 7.3 mΩ at 4.5 V gate voltage and 12 A drain current, while the syncFET (Q2) has a maximum on-resistance of 2.1 mΩ at 4.5 V gate voltage and 24 A drain current. Both devices support a continuous drain current of 13 A and 27 A respectively under 25 °C case temperature, with a junction operating temperature range of -55 °C to +150 °C. The device meets RoHS compliance standards, and thermal resistance values are specified for a 2 oz copper pad layout. Gate charge, switching times, and body diode characteristics are optimized for efficient high-frequency operation.

Datasheet Summary
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The FDPC1002S is a 25V Asymmetric Dual N-Channel MOSFET in a Power Clip package, designed for synchronous buck converter applications with an integrated switch node. The package measures 3.3 mm x 3.3 mm and features an exposed pad for improved thermal performance. The high-side MOSFET (Q1) has a maximum on-resistance of 7.3 mΩ at 4.5 V gate voltage and 12 A drain current, while the syncFET (Q2) has a maximum on-resistance of 2.1 mΩ at 4.5 V gate voltage and 24 A drain current. Both devices support a continuous drain current of 13 A and 27 A respectively under 25 °C case temperature, with a junction operating temperature range of -55 °C to +150 °C. The device meets RoHS compliance standards, and thermal resistance values are specified for a 2 oz copper pad layout. Gate charge, switching times, and body diode characteristics are optimized for efficient high-frequency operation.

Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPC1002S - 871676-FDPC1002S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPC1002S
871676-FDPC1002S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPC1002S 871676-FDPC1002S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 871676-FDPC1002S Features: Mosfet Array Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 871676-FDPC1002S
Features: Mosfet Array
Package: Bulk
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 871676-FDPC1002S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPC1002S
Package Type SOT3
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