onsemi Single Bipolar Transistors FJPF3305H2TU

Description
NPN Silicon Transistor
Request a Quote Datasheet
Description
NPN Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJPF3305H2TU - Rochester Electronics
Newburyport, MA, United States
NPN Silicon Transistor

NPN Silicon Transistor

Supplier's Site Datasheet
 - FJPF3305H2TU - Rochester Electronics
Newburyport, MA, United States
NPN Silicon Transistor

NPN Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - FJPF3305H2TU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJPF3305H2TU-ND
Single Bipolar Transistors FJPF3305H2TU-ND
Bipolar (BJT) Transistor NPN 400V 4A 4MHz 30W Through Hole TO-220F-3

Bipolar (BJT) Transistor NPN 400V 4A 4MHz 30W Through Hole TO-220F-3

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TRANSISTORS - Transistors (BJT) - Single - FJPF3305H2TU - 067241-FJPF3305H2TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJPF3305H2TU
067241-FJPF3305H2TU
TRANSISTORS - Transistors (BJT) - Single - FJPF3305H2TU 067241-FJPF3305H2TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067241-FJPF3305H2TU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 1V @ 1A, 4A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 26 @ 1A, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067241-FJPF3305H2TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 1V @ 1A, 4A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 26 @ 1A, 5V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FJPF3305H2TU
Bipolar Transistors - BJT FJPF3305H2TU
Bipolar Transistors - BJT NPN 7 0V/4A

Bipolar Transistors - BJT NPN 7 0V/4A

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJPF3305H2TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJPF3305H2TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJPF3305H2TU
TRANS NPN 400V 4A TO220F-3

TRANS NPN 400V 4A TO220F-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJPF3305H2TU FJPF3305H2TU-ND 067241-FJPF3305H2TU FJPF3305H2TU FJPF3305H2TU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJPF3305H2TU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
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