onsemi Single Bipolar Transistors FJA4310OTU

Description
Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3P
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - FJA4310OTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJA4310OTU-ND
Single Bipolar Transistors FJA4310OTU-ND
Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3P

Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3P

Buy Now Datasheet
 - FJA4310OTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJA4310OTU - 1174309-FJA4310OTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJA4310OTU
1174309-FJA4310OTU
TRANSISTORS - Transistors (BJT) - Single - FJA4310OTU 1174309-FJA4310OTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1174309-FJA4310OTU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3, SC-65-3 Power - Max: 100W Transistor Type: NPN Frequency - Transition: 30MHz Family Name: FJA4310O Categories: Discrete Semiconductor Products Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 140V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Maximum): 10μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 70 @ 3A, 4V Alternative Parts (Cross-Reference): 2STC4468; 2SD1047; 2SC5198O; Introduction Date: November 12, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1174309-FJA4310OTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 100W
Transistor Type: NPN
Frequency - Transition: 30MHz
Family Name: FJA4310O
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 140V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Maximum): 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 70 @ 3A, 4V
Alternative Parts (Cross-Reference): 2STC4468; 2SD1047; 2SC5198O;
Introduction Date: November 12, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
Through-Hole 200V 10A 100W Bipolar Transistor
276-FJA4310OTU
Through-Hole 200V 10A 100W Bipolar Transistor 276-FJA4310OTU
NPN BJT Transistor | 200V VCBO | 10A | 100W PD | 30MHz | Through Hole Product overview: FJA4310OTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 200V, 10A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 200V, 10A, 100W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJA4310OTU can be used for catalog matching and distributor lookup.

NPN BJT Transistor | 200V VCBO | 10A | 100W PD | 30MHz | Through Hole Product overview: FJA4310OTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 200V, 10A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 200V, 10A, 100W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJA4310OTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJA4310OTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJA4310OTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJA4310OTU
TRANS NPN 140V 10A TO3P

TRANS NPN 140V 10A TO3P

Supplier's Site
In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P - 598-FJA4310OTU - Utmel Electronic Limited
Hong Kong, China
In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P
598-FJA4310OTU
In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P 598-FJA4310OTU
In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P

In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FJA4310OTU
Bipolar Transistors - BJT FJA4310OTU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Buy Now Datasheet
Trans, Npn, 140V, 10A, 150Deg C, 100W Rohs Compliant Onsemi - 54AH8709 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 140V, 10A, 150Deg C, 100W Rohs Compliant Onsemi
54AH8709
Trans, Npn, 140V, 10A, 150Deg C, 100W Rohs Compliant Onsemi 54AH8709
TRANS, NPN, 140V, 10A, 150DEG C, 100W ROHS COMPLIANT: YES

TRANS, NPN, 140V, 10A, 150DEG C, 100W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors
Product Number FJA4310OTU-ND FJA4310OTU 1174309-FJA4310OTU 276-FJA4310OTU FJA4310OTU 598-FJA4310OTU FJA4310OTU 54AH8709
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJA4310OTU Through-Hole 200V 10A 100W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P Bipolar Transistors - BJT Trans, Npn, 140V, 10A, 150Deg C, 100W Rohs Compliant Onsemi
Polarity NPN NPN NPN NPN NPN; NPN NPN
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3L TO-3; SOT3 TO-3
Packing Method Tube; Tube Tube; Tube Tube; Tube
TJ 150 C (302 F) -55 C (-67 F)
Power Gain 70 dB
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