Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3P
NPN BJT Transistor | 200V VCBO | 10A | 100W PD | 30MHz | Through Hole Product overview: FJA4310OTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 200V, 10A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 200V, 10A, 100W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJA4310OTU can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1174309-FJA4310OTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 100W
Transistor Type: NPN
Frequency - Transition: 30MHz
Family Name: FJA4310O
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 140V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Maximum): 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 70 @ 3A, 4V
Alternative Parts (Cross-Reference): 2STC4468; 2SD1047; 2SC5198O;
Introduction Date: November 12, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
NPN Epitaxial Silicon Transistor
In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P
TRANS NPN 140V 10A TO3P
TRANS, NPN, 140V, 10A, 150DEG C, 100W ROHS COMPLIANT: YES
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | FJA4310OTU-ND | 276-FJA4310OTU | 1174309-FJA4310OTU | FJA4310OTU | 598-FJA4310OTU | FJA4310OTU | 54AH8709 | FJA4310OTU |
| Product Name | Single Bipolar Transistors | Through-Hole 200V 10A 100W Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - FJA4310OTU | In a Pack of 5, ON Semi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Npn, 140V, 10A, 150Deg C, 100W Rohs Compliant Onsemi | Bipolar Transistors - BJT | |
| Polarity | NPN | NPN | NPN | NPN | NPN; NPN | NPN | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | TO-3; TO-3P-3L | TO-3 | ||||
| IC(max) | 10000 milliamps | 10000 milliamps | ||||||
| VCEO | 140 volts | 140 volts | ||||||
| VCBO | 200 volts |
