onsemi Single Bipolar Transistors FJE5304D

Description
NPN Triple Diffused Planar Silicon Transistor
Request a Quote Datasheet
Description
NPN Triple Diffused Planar Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJE5304D - Rochester Electronics
Newburyport, MA, United States
NPN Triple Diffused Planar Silicon Transistor

NPN Triple Diffused Planar Silicon Transistor

Supplier's Site Datasheet
 - FJE5304D - Rochester Electronics
Newburyport, MA, United States
NPN Triple Diffused Planar Silicon Transistor

NPN Triple Diffused Planar Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - FJE5304D-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJE5304D-ND
Single Bipolar Transistors FJE5304D-ND
Bipolar (BJT) Transistor NPN 400V 4A 30W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 400V 4A 30W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJE5304D - 067222-FJE5304D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJE5304D
067222-FJE5304D
TRANSISTORS - Transistors (BJT) - Single - FJE5304D 067222-FJE5304D
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067222-FJE5304D Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-126-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 1.5V @ 500mA, 2.5A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 8 @ 2A, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067222-FJE5304D
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-126-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 1.5V @ 500mA, 2.5A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 8 @ 2A, 5V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJE5304D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJE5304D
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJE5304D
TRANS NPN 400V 4A TO126-3

TRANS NPN 400V 4A TO126-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FJE5304D
Bipolar Transistors - BJT FJE5304D
Bipolar Transistors - BJT Sil Transistor NPN Triple Diff Planar

Bipolar Transistors - BJT Sil Transistor NPN Triple Diff Planar

Buy Now Datasheet

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJE5304D FJE5304D-ND 067222-FJE5304D FJE5304D FJE5304D
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJE5304D Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN; NPN
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